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参数资料
| 型号： | MTB3N100E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 262K |
| 代理商： | MTB3N100E |
MTB3N100E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
0
4
8
12
16
20
2
6
10
14
18
3
5 V
6 V
VDS ≥ 10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
TJ = –55°C
25
°C
100
°C
TJ = 25°C
VGS = 10 V
15 V
2.8
3.4
VGS = 0 V
0
200
400
1
100
100000
100
300
600
500
25
°C
100
°C
TJ = 125°C
1.0
3.0
5.5
1
3
5
6
4
2
4.5
25
°C
– 55
°C
VGS = 10 V
–50
0.4
0.8
1.2
2.0
2.4
–25
0
25
50
75
100
125
150
VGS = 10 V
ID = 1.5 A
4 V
5
1
1000
3.2
3.6
3.8
3.0
1.6
6
2
4
I D
,DRAIN
CURRENT
(AMPS)
5.6
2.0
4.0
6.0
5.0
10
1000
800
0
1.0
3.0
5.0
2.0
4.0
6.0
5.5
3
5
1
6
2
4
0
6.0
2.5
1.5
3.5
1.5
2.5
3.5
4.5
700
900
10000
VGS = 10 V
TJ = 100°C
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