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参数资料
| 型号： | MTB3N100E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/10页 |
| 文件大小： | 262K |
| 代理商： | MTB3N100E |
MTB3N100E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Figure 15. D2PAK Power Derating Curve
RθJA = 50°C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈ 450 mils x 350 mils
0.1
1.0
1000
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
100
10
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
0.1
t, TIME (ms)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
25
150
0
1.0E–05
1.0E–04
1.0E–02
0.1
1.0
0.01
1.0E–03
1.0E–01
1.0E+00
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
1.0E+01
250
VGS = 20 V
SINGLE PULSE
TC = 25°C
50
100
125
75
50
200
150
100
ID = 3 A
1.0
dc
100
s
10
s
1 ms
10 ms
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