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参数资料
| 型号： | MTB8N50ET4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-02, D2PAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 200K |
| 代理商： | MTB8N50ET4 |
MTB8N50E
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
500
Vdc
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
500
Vdc
GatetoSource Voltage Continuous
GatetoSource Voltage Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)
ID
IDM
8.0
5.0
32
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
125
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 W)
EAS
510
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (1)
RqJC
RqJA
1.0
62.5
50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 sec.
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
EFET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
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