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参数资料
| 型号： | MTB8N50ET4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-02, D2PAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 200K |
| 代理商： | MTB8N50ET4 |
MTB8N50E
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
100
°C
25
°C
TJ = 55°C
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
versus Voltage
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
16
12
8.0
4.0
10
8.0
6.0
4.0
2.0
0
16
12
8.0
4.0
2.0
2.5
4.0
4.5
5.0
5.5
6.0
6.5
7
0.8
0.6
0.4
0.2
0
14
10
6.0
2.0
0
0.60
0
4.0
8.0
12
2.5
1.5
0.5
0
150
100
50
0
50
TJ = 25°C
7 V
6 V
5 V
I D
,DRAIN
CURRENT
(AMPS)
VGS = 10 V
0
4.0
8.0
12
16
2.0
6.0
10
14
0
100
300
5
200
400
0
2.0
1.0
100,000
1,000
10
1.0
10,000
100
14
12
8 V
I D
,DRAIN
CURRENT
(AMPS)
0.55
0.70
0.65
0.75
0.85
0.80
TJ = 25°C
VGS = 10 V
15 V
1.6
1.2
1.0
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
VGS = 10 V
TJ = 100°C
25
°C
55
°C
125
75
25
VGS = 10 V
ID = 8 A
VGS = 0 V
TJ = 125°C
25
°C
100
°C
VDS ≥ 10 V
3.0
3.5
14
10
6.0
2.0
1.4
0.90
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