参数资料
型号: MTB8N50ET4
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: CASE 418B-02, D2PAK-3
文件页数: 5/7页
文件大小: 200K
代理商: MTB8N50ET4
MTB8N50E
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 8. High Voltage Capacitance Variation
Qg, TOTAL GATE CHARGE (nC)
Figure 9. GatetoSource and
DraintoSource Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus
Current
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
I S
,SOURCE
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
V
C,
CAP
ACIT
ANCE
(pF)
t,TIME
(ns)
4000
3000
2000
1000
20
10
5.0
0
5.0
10
10,000
1,000
100
10
100
8.0
6.0
4.0
2.0
0
32
24
16
8.0
0
1000
100
10
1.0
10
6.0
2.0
0
0.9
0.8
0.7
0.6
0.5
C,
CAP
ACIT
ANCE
(pF)
10
40
0.1
1.0
10
100
0
8.0
4.0
100
10
0.1
0.01
1.0
15
25
12
10
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
GS
1.3
1.2
1.1
1.0
TJ = 25°C
VGS = 0 V
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
dc
10 m
1 ms
10
m
TJ = 25°C
ID = 8 A
VDD = 250 V
VGS = 10 V
td(off)
tr
td(on)
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
VDS = 0 V
VGS = 0 V
Ciss
Crss
Coss
TJ = 25°C
VGS VDS
400
300
200
100
0
V
DS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
TJ = 25°C
ID = 8 A
VDS
VGS
Q2
Q1
QT
Q3
tf
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