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参数资料
| 型号： | MTDF1C02HD |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET |
| 中文描述： | 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/14页 |
| 文件大小： | 276K |
| 代理商： | MTDF1C02HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Polarity
N & P–Ch
N & P–Ch
N & P–Ch
N–Channel
Symbol
VDSS
VDGR
VGS
RTHJA
PD
Typical
—
—
—
80
—
—
—
—
—
Max
20
20
±
8.0
100
1.25
10
2.8
2.3
23
Unit
V
V
V
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
Figure A below
1 die operating
Steady State
Minimum
FR–4 or G–10 PCB
Figure B below
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
ID
ID
IDM
RTHJA
PD
1 die operating
Steady State
1 inch SQ.
FR–4 or G–10 PCB
Figure A below
N–Channel
ID
ID
IDM
RTHJA
PD
160
—
—
—
—
—
200
0.63
5.0
1.7
1.6
16
1 die operating
Steady State
Minimum
FR–4 or G–10 PCB
Figure B below
P–Channel
ID
ID
IDM
RTHJA
PD
80
—
—
—
—
—
100
1.25
10
2.3
1.9
19
1 die operating
Steady State
Minimum
FR–4 or G–10 PCB
Figure B below
P–Channel
ID
ID
IDM
RTHJA
PD
160
—
—
—
—
—
200
0.63
5.0
1.6
1.3
13
2 die operating
Steady State
Operating and Storage Temperature Range
(1) Repetitive rating; pulse width limited by maximum junction temperature.
N & P–Ch
ID
ID
IDM
TJ, Tstg
240
—
—
—
—
—
300
0.42
3.33
1.3
1.1
11
—
– 55 to 150
Figure B. Minimum FR–4 or G–10 PCB
Figure A. 1.0 Inch Square FR–4 or G–10 PCB
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PDF描述 |
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| MTE215N10E | TMOS POWER FET 215 AMPERES 100 VOLTS RDS(on) = 0.0055 OHM |
| MTE30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTDF1C02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1N02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
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