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参数资料
| 型号： | MTDF1C02HD |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET |
| 中文描述： | 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 7/14页 |
| 文件大小： | 276K |
| 代理商： | MTDF1C02HD |
7
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel
P–Channel
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
C
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
10
0
10
15
VGS
VDS
TJ = 25
°
C
VDS = 0 V
VGS = 0 V
400
200
0
20
Ciss
Coss
Crss
5
5
Ciss
Crss
600
800
V
Qg, TOTAL GATE CHARGE (nC)
0
1.0
2.0
3
3.0
ID = 1.7 A
TJ = 25
°
C
VGS
4
1
0
6
5
18
15
9
6
0
VDS
QT
Q1
Q2
4.0
5.0
V
3
2
12
Q3
t
RG, GATE RESISTANCE (OHMS)
1.0
100
10
1.0
VDD = 10 V
ID = 1.7 A
VGS = 4.5 V
TJ = 25
°
C
td(on)
tr
100
10
td(off)
tf
10
20
–10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
800
600
400
C
200
0
0
Ciss
Ciss
Coss
Crss
Crss
TJ = 25
°
C
VGS = 0 V
QG, TOTAL GATE CHARGE (nC)
6.0
0
3
1
0
V
1.0
2.0
3.0
4.0
5.0
2
4
5
G
VGS
VDS
TJ = 25
°
C
ID = 1.2 A
V
12
4.0
0
8.0
16
20
QT
Q1
Q2
Q3
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
t
10
TJ = 25
°
C
ID = 1.2 A
VDD = 10 V
VGS = 4.5 V
tr
tf
td(off)
td(on)
VGS
VDS
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTDF1C02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1N02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
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