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参数资料
| 型号： | MTDF1C02HD |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET |
| 中文描述： | 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 4/14页 |
| 文件大小： | 276K |
| 代理商： | MTDF1C02HD |
4
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TA = 25
°
C unless otherwise noted) (1)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
SOURCE–DRAIN DIODE CHARACTERISTICS
(TC = 25
°
C)
Forward Voltage (2)
(IS = 1.7 Adc, VGS = 0 Vdc) (1)
(IS = 1.2 Adc, VGS = 0 Vdc)
VSD
(N)
(P)
—
—
0.84
0.89
1.0
1.1
Vdc
Reverse Recovery Time
(IF = IS,
(F
trr
(N)
(P)
—
—
29
86
—
—
ns
ta
(N)
(P)
—
—
14
27
—
—
dIS/dt = 100 A/
μ
s) (1)
tb
(N)
(P)
—
—
15
59
—
—
Reverse Recovery Stored Charge
QRR
(N)
(P)
—
—
0.018
0.115
—
—
μ
C
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
N–Channel
P–Channel
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25
°
C
2.3 V
2.1 V
1.9 V
2.7 V
4.5 V
VGS = 10 V
1.7 V
1.5 V
0
0.4
1.6
2.0
0
1.0
3.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
4.0
2.0
1.2
0.8
0
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
2.0
4.0
1.0
2.0
2.5
0.5
3.0
1.5
1.0
2.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4.0
2.0
3.0
1.0
I
0
0.8
0.4
1.2
1.6
1.7 V
1.9 V
2.1 V
2.3 V
TJ = 25
°
C
2.5 V
2.7 V
2.9 V
3.1 V
VGS = 8
4.5 V
3.7 V
3.3 V
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4.0
0
2.0
1.0
0
I
D
3.0
1.0
2.0
3.0
4.0
,
TJ = –55
°
C
100
°
C
25
°
C
VDS
≥
10 V
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PDF描述 |
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| MTE30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTDF1C02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1N02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
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