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参数资料
| 型号： | MTDF1C02HD |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET |
| 中文描述： | 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 3/14页 |
| 文件大小： | 276K |
| 代理商： | MTDF1C02HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (1)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (Cpk
≥
2.0)
(VGS = 0 Vdc, ID = 250
μ
Adc)
Breakdown Temperature Coefficient
(Positive)
(1)(3)
V(BR)DSS
(N)
(P)
20
20
—
—
—
—
Vdc
(N)
(P)
—
—
5.0
14
—
—
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 16 Vdc)
(VGS = 0 Vdc, VDS = 20 Vdc)
IDSS
(N)
(P)
—
—
—
—
1.0
1.0
μ
Adc
Gate–Body Leakage Current (VGS =
±
8.0 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient
(Negative)
IGSS
—
—
—
100
nAdc
(Cpk
≥
2.0)
(1)(3)
VGS(th)
(N)
(P)
0.7
0.7
0.90
0.95
1.1
1.4
Vdc
(N)
(P)
—
—
2.5
2.2
—
—
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.7 Adc)
(VGS = 4.5 Vdc, ID = 1.6 Adc)
(Cpk
≥
2.0)
(VGS = 2.7 Vdc, ID = 0.85 Adc)
(VGS = 2.7 Vdc, ID = 0.8 Adc)
(VDS = 10 Adc, ID = 0.85 Adc)
(VDS = 10 Adc, ID = 0.6 Adc)
RDS(on)
(N)
(P)
—
—
0.100
0.146
0.120
0.175
Ohm
Drain–to–Source On–Resistance
(1)(3)
RDS(on)
(N)
(P)
—
—
0.133
0.220
0.16
0.28
Ohm
Forward Transconductance (1)
gFS
(N)
(P)
2.0
1.3
—
—
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 15 Vd
f = 1.0 MHz)
V
0 Vd
Ciss
(N)
(P)
—
—
145
225
—
—
pF
Output Capacitance
Coss
(N)
(P)
—
—
90
150
—
—
Transfer Capacitance
Crss
(N)
(P)
—
—
38
60
—
—
SWITCHING CHARACTERISTICS (3)
Turn–On Delay Time
(VDD = 10 Vdc,D
(DD
VGS = 4.5 Vdc,
RG = 6.0
) (1)
td(on)
(N)
(P)
—
—
8.0
15
—
—
ns
Rise Time
,
tr
(N)
(P)
—
—
27
27
—
—
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 1.2 Adc,
VGS = 4.5 Vdc,
VGS 4.5 Vdc,
RG = 6.0
) (1)
( )
td(off)
(N)
(P)
—
—
23
60
—
—
Fall Time
tf
(N)
(P)
—
—
34
72
—
—
Turn–On Delay Time
(VDS = 10 Vdc, ID = 0.85 Adc,
(DS
,D
VGS = 2.7 Vdc,
RG = 6.0
) (1)
td(on)
(N)
(P)
—
—
16
20
—
—
Rise Time
,
tr
(N)
(P)
—
—
79
94
—
—
Turn–Off Delay Time
(VDS = 10 Vdc, ID = 0.6 Adc,
VGS = 2.7 Vdc,
VGS 2.7 Vdc,
RG = 6.0
) (1)
( )
td(off)
(N)
(P)
—
—
24
49
—
—
Fall Time
tf
(N)
(P)
—
—
31
76
—
—
Total Gate Charge
(VDS = 16 Vd
VGS = 4.5 Vdc) (1)
I
1 7 Ad
QT
(N)
(P)
—
—
3.9
5.3
5.5
7.5
nC
Gate–Source Charge
Q1
(N)
(P)
—
—
0.4
0.7
—
—
Gate–Drain Charge
(VDS = 16 Vdc, ID = 1.2 Adc,
VGS = 4.5 Vdc) (1)
Q2
(N)
(P)
—
—
1.7
2.6
—
—
VGS 4.5 Vdc) ( )
Q3
(N)
(P)
—
—
1.5
1.9
—
—
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(3) Switching characteristics are independent of operating junction temperature.
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTDF1C02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1N02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
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