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参数资料
| 型号： | MTP3N50E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 2/8页 |
| 文件大小： | 251K |
| 代理商： | MTP3N50E |
MTP3N50E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 0.25 mA)
V(BR)DSS
500
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 500 V, VGS = 0)
(VDS = 400 V, VGS = 0, TJ = 125°C)
IDSS
—
0.25
1.0
mAdc
Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
—
100
nAdc
Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
—
100
nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
(TJ = 125°C)
VGS(th)
2.0
1.5
—
4.0
3.5
Vdc
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)
RDS(on)
—
2.4
3.0
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 A)
(ID = 1.5 A, TJ = 100°C)
VDS(on)
—
10
8.0
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)
gFS
1.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
—
435
—
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Coss
—
56
—
Transfer Capacitance
f = 1.0 MHz)
Crss
—
9.2
—
SWITCHING CHARACTERISTICS*
Turn–On Delay Time
(VDD = 250 V, ID ≈ 3.0 A,
RG = 18 , RL = 83 ,
VGS(on) = 10 V)
td(on)
—
14
—
ns
Rise Time
(VDD = 250 V, ID ≈ 3.0 A,
RG = 18 , RL = 83 ,
VGS(on) = 10 V)
tr
—
14
—
Turn–Off Delay Time
RG = 18 , RL = 83 ,
VGS(on) = 10 V)
td(off)
—
30
—
Fall Time
GS(on) = 10 V)
tf
—
20
—
Total Gate Charge
(VDS = 400 V, ID = 3.0 A,
VGS = 10 V)
Qg
—
15
21
nC
Gate–Source Charge
(VDS = 400 V, ID = 3.0 A,
VGS = 10 V)
Qgs
—
2.5
—
Gate–Drain Charge
VGS = 10 V)
Qgd
—
10
—
SOURCE–DRAIN DIODE CHARACTERISTICS*
Forward On–Voltage
(IS = 3.0 A)
VSD
—
1.5
Vdc
Forward Turn–On Time
(IS = 3.0 A, di/dt = 100 A/s)
ton
—
**
—
ns
Reverse Recovery Time
(IS = 3.0 A, di/dt = 100 A/s)
trr
—
200
—
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
Ld
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
Ls
—
7.5
—
* Indicates Pulse Test: Pulse Width = 300
s Max, Duty Cycle ≤ 2.0%.
** Limited by circuit inductance.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP3N55 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:HIGH VOLTAGE POWER MOSFET N-CHANNEL |
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| MTP3N60E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220 制造商:ON Semiconductor 功能描述:TMO SPWR 600V .5R TO220 制造商:ON Semiconductor 功能描述:MOSFET Transistor, N-Channel, TO-220 制造商:Motorola Inc 功能描述: 制造商:MOTOROLA 功能描述: |
| MTP3N60FI | 制造商:STMicroelectronics 功能描述:2.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP3NA60 | 制造商:STMicroelectronics 功能描述:3NA60 |
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