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参数资料
| 型号： | MTP3N50E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 3/8页 |
| 文件大小： | 251K |
| 代理商： | MTP3N50E |
MTP3N50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Gate–Threshold Voltage Variation
With Temperature
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Breakdown Voltage Variation
With Temperature
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus Drain Current
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. On–Resistance versus Temperature
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
I D
,DRAIN
CURRENT
(AMPS)
V
GS(th)
,GA
TE
THRESHOLD
VOL
TAGE
(NORMALIZED)
V
BR(DSS)
,DRAIN–T
O–SOURCE
BREAKDOWN
VOL
TAGE
(NORMALIZED)
6
5
4
3
2
20
16
12
8
4
0
1.2
1.1
1
0.9
0.8
–50
–25
0
25
50
75
100
125
150
5
4
3
2
1
0
8
6
4
2
0
1.2
1.1
1
0.9
0.8
–50
0
50
100
150
8
6
4
2
5
4
3
2
1
0
2.5
2
1.5
1
0.5
TJ = 25°C
7 V
6 V
5 V
VDS = VGS
ID = 0.25 mA
TJ = –55°C
25
°C
100
°C
VGS = 0
ID = 250 A
TJ = 100°C
25
°C
–55
°C
VGS = 10 V
ID = 1.5 A
I D
,DRAIN
CURRENT
(AMPS)
VGS = 10 V
4 V
VDS ≥ 10 V
1
0
2
6
10
14
18
0
–50
–25
0
25
50
75
100
125
150
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP3N55 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:HIGH VOLTAGE POWER MOSFET N-CHANNEL |
| MTP3N60 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| MTP3N60E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220 制造商:ON Semiconductor 功能描述:TMO SPWR 600V .5R TO220 制造商:ON Semiconductor 功能描述:MOSFET Transistor, N-Channel, TO-220 制造商:Motorola Inc 功能描述: 制造商:MOTOROLA 功能描述: |
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| MTP3NA60 | 制造商:STMicroelectronics 功能描述:3NA60 |
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