参数资料
型号: MTP3N50E
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件页数: 6/8页
文件大小: 251K
代理商: MTP3N50E
MTP3N50E
6
Motorola TMOS Power MOSFET Transistor Device Data
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 16. Capacitance Variation
C,
CAP
ACIT
ANCE
(pF)
VGS
VDS
0
Ciss
1000
800
600
400
25
20
10
0
10
Figure 17. Gate Charge versus
Gate–To–Source Voltage
QG, TOTAL GATE CHARGE (nC)
16
0
5
12
8
4
10
15
20
25
200
Figure 18. Gate Charge Test Circuit
Vin
15 V
100 k
47 k
2N3904
1 mA
+18 V
VDD
10 V
100 k
0.1
F
100
FERRITE
BEAD
DUT
SAME
DEVICE TYPE
AS DUT
Vin = 15 Vpk; PULSE WIDTH ≤ 100 s, DUTY CYCLE ≤ 10%
TJ = 25°C
VGS = 0
47 k
VDS = 100 V
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
250 V
5
15
VDS = 0
TJ = 25°C
ID = 3 A
400 V
Coss
Crss
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