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参数资料
| 型号： | MTP4N50E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 6/8页 |
| 文件大小： | 254K |
| 代理商： | MTP4N50E |
MTP4N50E
6
Motorola TMOS Power MOSFET Transistor Device Data
Figure 16. Unclamped Inductive Switching
Test Circuit
Figure 17. Unclamped Inductive Switching
Waveforms
t
L
VDS
ID
VDD
tP
V(BR)DSS
VDD
ID(t)
C
4700
F
250 V
RGS
50
IO
Vds(t)
t, (TIME)
WDSR +
1
2
L IO2
V(BR)DSS
V(BR)DSS – VDD
RESISTIVE SWITCHING
PULSE GENERATOR
VDD
Vout
Vin
Rgen
50
z = 12
50
DUT
RL
Figure 18. Switching Test Circuit
toff
OUTPUT, Vout
INVERTED
ton
tr
td(off)
tf
td(on)
90%
10%
INPUT, Vin
10%
50%
90%
50%
PULSE WIDTH
Figure 19. Switching Waveforms
* Note: The Mirror is shorted to the Kelvin terminal for this test.
Figure 20. Gate Charge Test Circuit
Vin
15 V
100 k
47 k
2N3904
1 mA
+18 V
VDD
10 V
100 k
0.1
F
100
FERRITE
BEAD
DUT
SAME
DEVICE TYPE
AS DUT
Vin = 15 Vpk; PULSE WIDTH ≤ 100 s, DUTY CYCLE ≤ 10%
47 k
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