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参数资料
| 型号： | MTP6N60E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 96K |
| 代理商： | MTP6N60E |
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 5
1
Publication Order Number:
MTP6N60E/D
TMOS E-FET.
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
600
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
600
Vdc
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
— Continuous
— Continuous @ 100
°C
— Single Pulse (tp ≤ 10 s)
ID
IDM
6.0
4.6
18
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
125
1.0
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
–55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
EAS
405
mJ
Thermal Resistance — Junction to Case
°
— Junction to Ambient
°
RθJC
RθJA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
MTP6N60E
TMOS POWER FET
6.0 AMPERES
600 VOLTS
RDS(on) = 1.2 OHMS
ON Semiconductor Preferred Device
D
S
G
CASE 221A–09, Style 5
TO–220AB
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