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参数资料
| 型号： | MTP6N60E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 96K |
| 代理商： | MTP6N60E |
MTP6N60E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
600
—
689
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
50
Adc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.1
4.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
RDS(on)
—
0.94
1.2
Ohms
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)
VDS(on)
—
6.0
—
8.6
7.6
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
gFS
2.0
5.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
—
1498
2100
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
158
220
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
29
60
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
td(on)
—
14
30
ns
Rise Time
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS =10Vdc
tr
—
19
40
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
40
80
Fall Time
RG
9.1
)
tf
—
26
55
Gate Charge
QT
—
35.5
50
nC
(VDS = 300 Vdc, ID = 6.0 Adc,
Q1
—
8.1
—
(VDS
300 Vdc, ID
6.0 Adc,
VGS = 10 Vdc)
Q2
—
14.1
—
Q3
—
15.8
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.83
0.72
1.2
—
Vdc
Reverse Recovery Time
trr
—
266
—
ns
(IS = 6.0 Adc, VGS = 0 Vdc,
ta
—
166
—
(IS
6.0 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
—
100
—
Reverse Recovery Stored Charge
QRR
—
2.5
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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