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参数资料
| 型号： | MTP6N60E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 96K |
| 代理商： | MTP6N60E |
MTP6N60E
http://onsemi.com
6
SAFE OPERATING AREA
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Thermal Response
100
10
1.0
0.1
1
10
100
1000
100 s
10 s
1 ms
10 ms
dc
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINN-T
O-SOURCE
AV
ALANCHE
ENERGY
(mJ)
0
25
50
75
100
125
450
ID = 6 A
150
400
150
100
50
200
250
300
350
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (SECONDS)
D = 0.5
0.2
0.1
0.05
0.02
0.01
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
相关PDF资料 |
PDF描述 |
|---|---|
| MTP6N60 | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| MTP8N10E | 8 A, 100 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP8N15L | 8 A, 150 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTV10N100E | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
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| MTP75 | 制造商:NELLSEMI 制造商全称:Nell Semiconductor Co., Ltd 功能描述:Glass Passivated Three-Phase Bridge Rectifier, 75A |
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| MTP75N03HDL | 制造商:ON Semiconductor 功能描述: 制造商:ON Semiconductor 功能描述:MOSFET Transistor, N-Channel, TO-220AB |
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