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参数资料
| 型号： | MUN5130T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, 3 PIN |
| 文件页数： | 10/16页 |
| 文件大小： | 136K |
| 代理商： | MUN5130T3 |
MUN5111T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
–
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
–
500
nAdc
Emitter–Base Cutoff Current
MUN5111T1
(VEB = 6.0 V, IC = 0)
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
IEBO
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector–Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
–
Vdc
Collector–Emitter Breakdown Voltage (Note 4.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
–
Vdc
ON CHARACTERISTICS (Note 4.)
DC Current Gain
MUN5111T1
(VCE = 10 V, IC = 5.0 mA)
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
hFE
35
60
80
160
3.0
8.0
15
80
60
100
140
250
5.0
15
27
140
130
140
150
140
–
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
VCE(sat)
–
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
MUN5113T1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k)
MUN5136T1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k)
MUN5137T1
VOL
–
0.2
Vdc
4. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
相关PDF资料 |
PDF描述 |
|---|---|
| MUN5111T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5115T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5135T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5114T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5111T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MUN5131 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5131DW | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
| MUN5131DW1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k |
| MUN5131DW1T1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MUN5131DW1T1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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