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参数资料
| 型号： | NAND01GR4B2BV1E |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48 |
| 文件页数： | 15/58页 |
| 文件大小： | 943K |
| 代理商： | NAND01GR4B2BV1E |
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NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
22/58
Page Program
The Page Program operation is the standard oper-
ation to program data to the memory array. Gener-
ally, data is programmed sequentially, however
the device does support Random Input within a
page.
The memory array is programmed by page, how-
ever partial page programming is allowed where
any number of Bytes (1 to 2112) or Words (1 to
1056) can be programmed.
The maximum number of consecutive partial page
program operations allowed in the same page is
eight. After exceeding this a Block Erase com-
mand must be issued before any further program
operations can take place in that page.
Sequential Input. To input data sequentially the
addresses must be sequential and remain in one
block.
For Sequential Input each Page Program opera-
tion consists of five steps (see Figure 12.):
1.
one bus cycle is required to setup the Page
Program (Sequential Input) command (see
2.
four or five bus cycles are then required to
input the program address (refer to Table 6.
and Table 7.)
3.
the data is then loaded into the Data Registers
4.
one bus cycle is required to issue the Page
Program confirm command to start the P/E/R
Controller. The P/E/R will only start if the data
has been loaded in step 3.
5.
the P/E/R Controller then programs the data
into the array.
Random Data Input. During a Sequential Input
operation, the next sequential address to be pro-
grammed can be replaced by a random address,
by issuing a Random Data Input command. The
following two steps are required to issue the com-
mand:
1.
one bus cycle is required to setup the Random
Data Input command (see Table 10.)
2.
two bus cycles are then required to input the
new column address (refer to Table 6.)
Random Data Input can be repeated as often as
required in any given page.
Once the program operation has started the Sta-
tus Register can be read using the Read Status
Register command. During program operations
the Status Register will only flag errors for bits set
to '1' that have not been successfully programmed
to '0'.
During the program operation, only the Read Sta-
tus Register and Reset commands will be accept-
ed, all other commands will be ignored.
Once the program operation has completed the P/
E/R Controller bit SR6 is set to ‘1’ and the Ready/
Busy signal goes High.
The device remains in Read Status Register mode
until another valid command is written to the Com-
mand Interface.
Figure 12. Page Program Operation
I/O
RB
Address Inputs
SR0
ai08659
Data Input
10h
70h
80h
Page Program
Setup Code
Confirm
Code
Read Status Register
Busy
tBLBH2
(Program Busy time)
相关PDF资料 |
PDF描述 |
|---|---|
| NAND512W4B2BN6T | 32M X 16 FLASH 3V PROM, 25000 ns, PDSO48 |
| NAND01GR4B2BV1T | 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| NAND01GR4B2CV6T | 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| NAND01GR4B2CZA1E | 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63 |
| NAND01GW3A0BZB1 | 128M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GR4B2BZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2BZA1E | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR4B2BZA1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR4B2BZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2BZA6E | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
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