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参数资料
型号： NAND01GR4B2BV1E
厂商： NUMONYX
元件分类： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
封装： 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48
文件页数： 57/58页
文件大小： 943K
代理商： NAND01GR4B2BV1E
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
8/58
Table 2. Product Description
Note: 1. Both Single and Dual Die devices.
2. Dual Die devices only.
Figure 2. Logic Block Diagram
Reference
Part Number
Density
Bus
Width
Page
Size
Block
Size
Memory
Array
Operating
Voltage
Timings
Packages
Random
Access
(max)
Sequential
Access
(min)
Page
Program
(typ)
Block
Erase (typ)
NAND512-B
NAND512R3B
512Mbit
x8
2048+64
Bytes
128K+4K
Bytes
64 Pages x
512 Blocks
1.7 to 1.95V
25s
60ns
300s
2ms
TSOP48
USOP48
VFBGA63
NAND512W3B
2.7 to 3.6V
25s
50ns
300s
NAND512R4B
x16
1024+32
Words
64K+2K
Words
1.7 to 1.95V
25s
60ns
300s
NAND512W4B
2.7 to 3.6V
25s
50ns
300s
NAND01G-B
NAND01GR3B
1Gbit
x8
2048+64
Bytes
128K+4K
Bytes
64 Pages x
1024 Blocks
1.7 to 1.95V
25s
60ns
300s
2ms
TSOP48
USOP48
VFBGA63
NAND01GW3B
2.7 to 3.6V
25s
50ns
300s
NAND01GR4B
x16
1024+32
Words
64K+2K
Words
1.7 to 1.95V
25s
60ns
300s
NAND01GW4B
2.7 to 3.6V
25s
50ns
300s
NAND02G-B
NAND02GR3B
2Gbit
x8
2048+64
Bytes
128K+4K
Bytes
64 Pages x
2048 Blocks
1.7 to 1.95V
25s
60ns
300s
2ms
TSOP48
(1)
TFBGA63
(2)
NAND02GW3B
2.7 to 3.6V
25s
50ns
300s
NAND02GR4B
x16
1024+32
Words
64K+2K
Words
1.7 to 1.95V
25s
60ns
300s
NAND02GW4B
2.7 to 3.6V
25s
50ns
300s
NAND04G-B
NAND04GR3B
4Gbit
x8
2048+64
Bytes
128K+4K
Bytes
64 Pages x
4096 Blocks
1.7 to 1.95V
25s
60ns
300s
2ms
TSOP48
NAND04GW3B
2.7 to 3.6V
25s
50ns
300s
NAND04GR4B
x16
1024+32
Words
64K+2K
Words
1.7 to 1.95V
25s
60ns
300s
NAND04GW4B
2.7 to 3.6V
25s
50ns
300s
NAND08G-B
NAND08GR3B
8Gbit
x8
2048+64
Bytes
128K+4K
Bytes
64 Pages x
8192 Blocks
1.7 to 1.95V
25s
60ns
300s
2ms
TSOP48
NAND08GW3B
2.7 to 3.6V
25s
50ns
300s
NAND08GR4B
x16
1024+32
Words
64K+2K
Words
1.7 to 1.95V
25s
60ns
300s
NAND08GW4B
2.7 to 3.6V
25s
50ns
300s
Address
Register/Counter
Command
Interface
Logic
P/E/R Controller,
High Voltage
Generator
WP
I/O Buffers & Latches
I/O8-I/O15, x16
E
W
AI09373b
R
Y Decoder
Page Buffer
NAND Flash
Memory Array
X
Decoder
I/O0-I/O7, x8/x16
Command Register
CL
AL
Cache Register
RB
PRL
相关PDF资料
PDF描述
NAND512W4B2BN6T 32M X 16 FLASH 3V PROM, 25000 ns, PDSO48
NAND01GR4B2BV1T 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
NAND01GR4B2CV6T 64M X 16 FLASH 1.8V PROM, 25000 ns, PDSO48
NAND01GR4B2CZA1E 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
NAND01GW3A0BZB1 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
相关代理商/技术参数
参数描述
NAND01GR4B2BZA1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZA1E 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZA1F 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZA6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZA6E 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
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