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参数资料
| 型号： | NAND01GR4B2CZA1E |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63 |
| 封装： | 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63 |
| 文件页数： | 1/64页 |
| 文件大小： | 632K |
| 代理商： | NAND01GR4B2CZA1E |
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February 2006
Rev 4.0
1/64
2
NAND01G-B
NAND02G-B
1 Gbit, 2 Gbit,
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Feature summary
●
High Density NAND Flash memories
–
Up to 2 Gbit memory array
–
Up to 64Mbit spare area
–
Cost effective solutions for mass
storage applications
●
NAND interface
–
x8 or x16 bus width
–
Multiplexed Address/ Data
–
Pinout compatibility for all densities
●
Supply voltage
–1.8V device: VDD = 1.7 to 1.95V
–3.0V device: VDD = 2.7 to 3.6V
●
Page size
–
x8 device: (2048 + 64 spare) Bytes
–
x16 device: (1024 + 32 spare) Words
●
Block size
–
x8 device: (128K + 4K spare) Bytes
–
x16 device: (64K + 2K spare) Words
●
Page Read/Program
–
Random access: 25s (max)
–
Sequential access: 50ns (min)
–
Page program time: 300s (typ)
●
Copy Back Program mode
–
Fast page copy without external
buffering
●
Cache Program and Cache Read modes
–
Internal Cache Register to improve the
program and read throughputs
●
Fast Block Erase
–
Block erase time: 2ms (typ)
●
Status Register
●
Electronic Signature
●
Chip Enable ‘don’t care’
–
for simple interface with microcontroller
●
Serial Number option
●
Data protection
–
Hardware and Software Block Locking
–
Hardware Program/Erase locked during
Power transitions
●
Data integrity
–
100,000 Program/Erase cycles
–
10 years Data Retention
■
ECOPACK packages
■
Development tools
–
Error Correction Code software and
hardware models
–
Bad Blocks Management and Wear
Leveling algorithms
–
File System OS Native reference
software
–
Hardware simulation models
FBGA
TSOP48 12 x 20mm
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
相关PDF资料 |
PDF描述 |
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| NAND01GW3A0BZB1 | 128M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND512R4A2CZB6E | 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55 |
| NAND512R4A0BZA6 | 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NAND512R4A0BZB6 | 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA55 |
| NAND512R4A0CZA6T | 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GR4B2CZA1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR4B2CZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2CZA6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2CZA6F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR4B2CZB1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
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