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参数资料
| 型号： | NAND01GR4B2CZA1E |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63 |
| 封装： | 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63 |
| 文件页数： | 22/64页 |
| 文件大小： | 632K |
| 代理商： | NAND01GR4B2CZA1E |
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NAND01G-B, NAND02G-B
Device operations
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6.4
Copy Back Program
The Copy Back Program operation is used to copy the data stored in one page and
reprogram it in another page.
The Copy Back Program operation does not require external memory and so the operation
is faster and more efficient because the reading and loading cycles are not required. The
operation is particularly useful when a portion of a block is updated and the rest of the block
needs to be copied to the newly assigned block.
If the Copy Back Program operation fails an error is signalled in the Status Register.
However as the standard external ECC cannot be used with the Copy Back Program
operation bit error due to charge loss cannot be detected. For this reason it is recommended
to limit the number of Copy Back Program operations on the same data and or to improve
the performance of the ECC.
The Copy Back Program operation requires four steps:
1.
The first step reads the source page. The operation copies all 1056 Words/ 2112 Bytes
from the page into the Data Buffer. It requires:
–
one bus write cycle to setup the command
–
4 bus write cycles to input the source page address
–
one bus write cycle to issue the confirm command code
2.
When the device returns to the ready state (Ready/Busy High), the next bus write cycle
of the command is given with the 4 bus cycles to input the target page address. Refer
to Table 11 for the addresses that must be the same for the Source and Target pages.
3.
Then the confirm command is issued to start the P/E/R Controller.
To see the Data Input cycle for modifying the source page and an example of the Copy Back
Program operation refer to Figure 12.
A data input cycle to modify a portion or a multiple distant portion of the source page, is
shown in Figure 13
Table 11.
Copy Back Program x8 Addresses
Density
Same Address for Source and Target Pages
1 Gbit
no constraint
2 Gbit
no constraint
2 Gbit DD(1)
1.
DD = Dual Die
A28
Table 12.
Copy Back Program x16 Addresses
Density
Same Address for Source and Target Pages
1 Gbit
no constraint
2 Gbit
no constraint
2 Gbit DD(1)
1.
DD = Dual Die
A27
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PDF描述 |
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| NAND512R4A0BZA6 | 32M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GR4B2CZA1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR4B2CZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2CZA6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2CZA6F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR4B2CZB1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
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