参数资料
型号: NAND01GR4B2CZA1E
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封装: 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件页数: 18/64页
文件大小: 632K
代理商: NAND01GR4B2CZA1E
NAND01G-B, NAND02G-B
Device operations
25/64
Figure 8.
Random Data Output During Sequential Data Output
I/O
RB
Address
Inputs
ai08658
Data Output
Busy
tBLBH1
(Read Busy time)
00h
Cmd
Code
30h
Address
Inputs
Data Output
05h
E0h
5 Add cycles
Main Area
Spare
Area
Col Add 1,2
Row Add 1,2,3
Cmd
Code
Cmd
Code
Cmd
Code
2Add cycles
Main Area
Spare
Area
Col Add 1,2
R
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PDF描述
NAND01GW3A0BZB1 128M X 8 FLASH 3V PROM, 35 ns, PBGA63
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相关代理商/技术参数
参数描述
NAND01GR4B2CZA1F 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZA6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2CZA6F 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2CZB1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory