参数资料
型号: NAND04GR3B3AN6
厂商: NUMONYX
元件分类: PROM
英文描述: 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
封装: 12 X 20 MM, PLASTIC, TSOP-48
文件页数: 48/59页
文件大小: 998K
代理商: NAND04GR3B3AN6
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
52/59
PACKAGE MECHANICAL
Figure 38. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20 mm, Package Outline
Note: Drawing is not to scale.
Table 26. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20 mm, Package Mechanical Data
Symbol
millimeters
inches
Typ
Min
Max
Typ
Min
Max
A
1.200
0.0472
A1
0.100
0.050
0.150
0.0039
0.0020
0.0059
A2
1.000
0.950
1.050
0.0394
0.0374
0.0413
B
0.220
0.170
0.270
0.0087
0.0067
0.0106
C
0.100
0.210
0.0039
0.0083
CP
0.080
0.0031
D1
12.000
11.900
12.100
0.4724
0.4685
0.4764
E
20.000
19.800
20.200
0.7874
0.7795
0.7953
E1
18.400
18.300
18.500
0.7244
0.7205
0.7283
e
0.500
0.0197
L
0.600
0.500
0.700
0.0236
0.0197
0.0276
L1
0.800
0.0315
α
TSOP-G
B
e
DIE
C
L
A1
α
E1
E
A
A2
1
24
48
25
D1
L1
CP
相关PDF资料
PDF描述
NAND512W3B3BZA1F 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512W3B3CV1 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND01GR4B3AV1F 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND01GW4B3CZA1E 64M X 16 FLASH 3V PROM, 35 ns, PBGA63
NAND08GR4B2AZC6E 512M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
相关代理商/技术参数
参数描述
NAND04GR4B2DWFD 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND04GR4B2EN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND04GR4B2EN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND04GW3B2AN6E 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 4GBIT 512MX8 25US 48TSOP - Trays
NAND04GW3B2BE06 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel