参数资料
型号: NAND08GR4B2BZC6T
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 512M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
封装: 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-63
文件页数: 53/59页
文件大小: 998K
代理商: NAND08GR4B2BZC6T
57/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
PART NUMBERING
Table 31. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to ’1’. For further
information on any aspect of this device, please contact your nearest ST Sales Office.
Example:
NAND02GR3B
2
A ZA
1
T
Device Type
NAND Flash Memory
Density
512 = 512Mb
01G = 1Gb
02G = 2Gb
04G = 4Gb
08G = 8Gb
Operating Voltage
R = VDD = 1.7 to 1.95V
W = VDD = 2.7 to 3.6V
Bus Width
3 = x8
4 = x16
Family Identifier
B = 2112 Bytes/ 1056 Word Page
Device Options
2 = Chip Enable Don't Care Enabled
3 = Chip Enable Don't Care Enabled and Automatic Page 0 Read at Power-up
Product Version
A = First Version
B= Second Version
C= Third Version
Package
N = TSOP48 12 x 20mm (all devices)
V = USOP48 12 x 17 x 0.65mm (512Mb and 1Gb devices)
ZA = VFBGA63 9.5 x 12 x 1mm, 0.8mm pitch (512Mb and 1Gb devices)
ZB = TFBGA63 9.5 x 12 x 1.2mm, 0.8mm pitch (2Gb Dual Die devices)
ZC = LFBGA63 9.5 x 12 x 1.4mm, 0.8mm pitch (8Gb Quadruple Die devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
相关PDF资料
PDF描述
NAND08GR4B3BN1 512M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3B3BZA6E 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512W3B3BN6E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3BZA6E 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512W3B3AN1 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
相关代理商/技术参数
参数描述
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