参数资料
型号: NAND08GR4B2BZC6T
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 512M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
封装: 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-63
文件页数: 55/59页
文件大小: 998K
代理商: NAND08GR4B2BZC6T
59/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
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相关PDF资料
PDF描述
NAND08GR4B3BN1 512M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3B3BZA6E 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512W3B3BN6E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3BZA6E 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512W3B3AN1 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
相关代理商/技术参数
参数描述
NAND08GW3B2AN6E 功能描述:闪存 4 GBit 2112 Byte 1056 WP 1.8v/3v RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND08GW3B2AN6F 功能描述:闪存 4 GB 2112B 1056 Word Pg 1.8V/3V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND08GW3B2BN6E 制造商:Micron Technology Inc 功能描述:NAND & S.MEDIA FLASH - Trays
NAND08GW3B2CN6E 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND08GW3B2CN6F 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel