参数资料
型号: NCP1380BGEVB
厂商: ON Semiconductor
文件页数: 14/26页
文件大小: 0K
描述: BOARD EVAL NCP1380B 19V QR CTLR
设计资源: NCP1380BGEVB Schematic
NCP1380BGEVB Gerber Files
NCP1380BGEVB BOM
标准包装: 1
系列: *
其它名称: NCP1380BGEVBOS
NCP1380
Figure 26. Operating Valley According to FB Voltage
VALLEY DETECTION AND SELECTION
The valley detection is done by monitoring the voltage of
the auxiliary winding of the transformer. A valley is detected
when the voltage on pin 1 crosses down the 55 mV internal
VDD
Rpullup
threshold. When a valley is detected, an internal counter is
incremented. The operating valley (1 st , 2 nd , 3 rd or 4 th ) is
determined by the FB voltage as shown by Figure 26.
VDD
FB
V FB
VDD
V FBth
LOGIC BLOCK
Ct
ICt
+
S
Q
Q
DRV
Ct setpoint
?
R
ZCD
10 V
+
?
Ct
Discharge
de m a g
Tim e Out
CS comparator
ES D
Vth
leakage
blanking
3 us puls e
DRV
La ux
Figure 27. Valley Detection Circuit
http://onsemi.com
14
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