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参数资料
| 型号： | NCP1380BGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 17/26页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCP1380B 19V QR CTLR |
| 设计资源： | NCP1380BGEVB Schematic NCP1380BGEVB Gerber Files NCP1380BGEVB BOM |
| 标准包装： | 1 |
| 系列： | * |
| 其它名称： | NCP1380BGEVBOS |
NCP1380
Figure 31. Zoom 3: 3 rd to 4 th Valley Transition
Figure 32. Zoom 4: 4 th Valley to VCO Mode Transition
Time Out
In case of extremely damped free oscillations, the ZCD
comparator can be unable to detect the valleys. To avoid
such situation, NCP1380 integrates a Time Out function that
acts as a substitute clock for the decimal counter inside the
logic bloc. The controller thus continues its normal
operation. To avoid having a too big step in frequency, the
time out duration is set to 5.5 m s. Figures 34 and 35 detail the
time out operation.
The NCP1380 also features an extended time out during
the soft?start.
Indeed, at startup, the output voltage reflected on the
auxiliary winding is low. Because of the voltage drop
introduced by the Over Power Compensation diode
(Figure 40), the voltage on the ZCD pin is very low and the
ZCD comparator might be unable to detect the valleys. In
this condition, setting the DRV Latch with the 5.5 m s
time?out can lead to a continuous conduction mode
operation (CCM) at the beginning of the soft?start. This
CCM operation only last a few cycles until the voltage on
ZCD pin becomes high enough to be detected by the ZCD
comparator. To avoid this, the time?out duration is extended
to 40 m s during the soft?start in order to ensure that the
transformer is fully demagnetized before the MOSFET is
turned?on.
http://onsemi.com
17
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| NCP1380DDR2G | 功能描述:电流型 PWM 控制器 QUASI-RES CUR MODE CONTRL RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
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