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参数资料
| 型号： | NCP3066SCBCKGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 9/20页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP3066SCBCKG |
| 设计资源： | NCP3066 Buck SOIC EVB BOM NCP3066SCBCKGEVB Gerber Files NCP3066 BUCK EVB Schematic |
| 标准包装： | 1 |
| 电流 - 输出 / 通道： | 150mA |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 3.2V |
| 特点： | 亮度控制 |
| 输入电压： | 12V |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP3066 |
| 其它名称： | NCP3066SCBCKGEVBOS |
NCP3066, NCV3066
APPLICATIONS
Figures 15 through 24 show the simplicity and flexibility
of the NCP3066. Two main converter topologies are
demonstrated with actual test data shown below each of the
circuit diagrams. The demo boards have an input for a digital
dimming signal. You can provide a PWM signal to change
the average output current and reduce the LED brightness.
Figure 14 gives the relevant design equations for the key
parameters. Additionally, a complete application design aid
for the NCP3066 can be found at www.onsemi.com.
Parameter
ton
toff
t on
Step ? Down
Vout ) VF
Vin * VSWCE * Vout
ton
toff
Step ? Up
Vout ) VF * Vin
Vin * VSWCE
ton
toff
f
ton
toff
) 1
f
ton
toff
) 1
CT + 381.6 @ 10
C T
f osc
* 6
* 343
10 * 12
I L(avg)
Iout
Iout
ton
toff
) 1
I pk (Switch)
IL(avg) )
D IL
2
IL(avg) )
D IL
2
R SC
0.20
Ipk (Switch)
0.20
Ipk (Switch)
L
Vin * VSWCE * Vout
D IL
ton
Vin * VSWCE
D IL
ton
V ripple(pp)
D IL
1
8 f CO
2
) (ESR) 2
ton Iout
CO
) D IL
ESR
I out
V ref
R s
V ref
R s
9. V SWCE ? Darlington Switch Collector to Emitter Voltage Drop, refer to Figures 7 and 8.
10. V F ? Output rectifier forward voltage drop. Typical value for 1N5819 Schottky barrier rectifier is 0.4 V.
11. The calculated t on /t off must not exceed the minimum guaranteed oscillator charge to discharge ratio.
Figure 14. Design Equations
The Following Converter Characteristics Must Be Chosen:
V in ? Nominal operating input voltage.
V out ? Desired output voltage.
I out ? Desired output current.
D I L ? Desired peak ? to ? peak inductor ripple current. For maximum output current it is suggested that D I L be chosen to be
less than 10% of the average inductor current I L(avg) . This will help prevent I pk (Switch) from reaching the current limit threshold
set by R SC . If the design goal is to use a minimum inductance value, let D I L = 2(I L(avg) ). This will proportionally reduce
converter output current capability.
f ? Maximum output switch frequency.
V ripple(pp) ? Desired peak ? to ? peak output ripple voltage. For best performance the ripple voltage should be kept to a low
value since it will directly affect line and load regulation. Capacitor C O should be a low equivalent series resistance (ESR)
electrolytic designed for switching regulator applications.
http://onsemi.com
9
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相关代理商/技术参数 |
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| NCP3066SCBSTGEVB | 功能描述:电源管理IC开发工具 NCP3066 SOIC8 BOOST DB RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCP308MT090TBG | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP308MT120TBG | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP308MT125TBG | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP308MT150TBG | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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