参数资料
型号: NCP5214EVB
厂商: ON Semiconductor
文件页数: 15/32页
文件大小: 0K
描述: EVAL BOARD FOR NCP5214
产品变化通告: Product Obsolescence 24/Jan/2011
设计资源: NCP5214EVB BOM
NCP5214EVB Gerber Files
NCP5214EVB Schematic
标准包装: 1
主要目的: DC/DC,步降
输出及类型: 1,非隔离
输出电压: 1.8V
电流 - 输出: 10A
输入电压: 5V,4.5 ~ 24 V
稳压器拓扑结构: 降压
频率 - 开关: 100Hz ~ 75kHz
板类型: 完全填充
已供物品:
已用 IC / 零件: NCP5214
其它名称: NCP5214EVBOS
NCP5214
DETAILED OPERATING DESCRIPTION
General
The NCP5214 2?in?1 Notebook DDR Power Controller
combines the efficiency of a PWM controller for the
VDDQ supply, with the simplicity of using a linear
regulator for the VTT termination voltage power supply.
The VDDQ output can be adjusted through the external
potential divider, while the VTT is internally set to track
half VDDQ.
The inclusion of VDDQ power good voltage monitor,
soft?start, VDDQ overcurrent protection, VDDQ
overvoltage and undervoltage protections, supply
undervoltage monitor, and thermal shutdown makes this
device a total power solution for high current DDR memory
system. The IC is packaged in DFN?22.
Control Logic
The internal control logic is powered by VCCA. The IC
is enabled whenever VDDQEN is high (exceed 1.4 V). An
internal bandgap voltage, VREF, is then generated. Once
VREF reaches its regulation voltage, an internal signal
VREFGD will be asserted. This transition wakes up the
supply undervoltage monitor blocks, which will assert
VCCAGD if VCCA voltage is within certain preset levels.
The control logic accepts external signals at VCCA,
OCDDQ, VDDQEN, VTTEN, and FPWM pins to control
the operating state of the VDDQ and VTT regulators in
accordance with Table 1. A timing diagram is shown in
Figure 38.
VDDQ Switching Regulator in Normal Mode (S0)
The VDDQ regulator is a switching synchronous
rectification buck controller directly driving two external
N?Channel power FETs. An external resistor divider sets
the nominal output voltage. The control architecture is
voltage mode fixed frequency PWM with external
compensation and with switching frequency fixed at
400 kHz " 15%. As can be observed from Figure 1, the
Table 1. State, Operation, Input and Output Condition Table
VDDQ output voltage is divided down and fed back to the
inverting input of an internal error amplifier through
FBDDQ pin to close the loop at VDDQ = VFBDDQ ×
(1 + R1/R2). This amplifier compares the feedback voltage
with an internal VREF (= 0.800 V) to generate an error
signal for the PWM comparator. This error signal is further
compared with a fixed frequency RAMP waveform
derived from the internal oscillator to generate a
pulse?width?modulated signal. This PWM signal drives
the external N?Channel Power FETs via the TGDDQ and
BGDDQ pins. External inductor L and capacitor COUT1
filter the output waveform. The VDDQ output voltage
ramps up at a pre?defined soft?start rate when the IC enters
state S0 from S5. When in normal mode, and regulation of
VDDQ is detected, signal INREGDDQ will go HIGH to
notify the control logic block.
Input voltage feedforward is implemented to the RAMP
signal generation to reject the effect of wide input voltage
variation. With input voltage feedforward, the amplitude of
the RAMP is proportional to the input voltage.
For enhanced efficiency, an active synchronous switch is
used to eliminate the conduction loss contributed by the
forward voltage of a diode or Schottky diode rectifier.
Adaptive non?overlap timing control of the
complementary gate drive output signals is provided to
reduce large shoot?through current that degrades
efficiency.
Tolerance of VDDQ
The tolerance of VFBDDQ and the ratio of external
resistor divider R1/R2 both impact the precision of VDDQ.
With the control loop in regulation, VDDQ = VFBDDQ ×
(1 + R1/R2). With a worst case (for all valid operating
conditions) VFBDDQ tolerance of " 1.5%, a worst case
range of " 2.5% for VDDQ = 1.8 V will be assured if the
ratio R1/R2 is specified as 1.2500 " 1%.
Input Conditions
Operating Conditions
Output Conditions
Mode
S5
S5
S0
S3
VCCA
Low
X
High
High
VOCDDQ
X
Low
High
High
VDDQEN
X
X
High
High
VTTEN
X
X
High
Low
FPWM
X
X
X
High
VDDQ
H?Z
H?Z
Normal
Standby
VTTREF
H?Z
H?Z
Normal
Normal
VTT
H?Z
H?Z
Normal
H?Z
TGDDQ
Low
Low
Normal
Standby
BGDDQ
Low
Low
Normal
Standby
PGOOD
Low
Low
H?Z
H?Z
(Power?
saving)
(Power?
saving)
S3
S5
High
X
High
X
High
Low
Low
X
Low
X
Normal
H?Z
Normal
H?Z
H?Z
H?Z
Normal
Low
Normal
Low
H?Z
Low
http://onsemi.com
15
相关PDF资料
PDF描述
TC4468CPD IC MOSFET DVR QUAD AND 14DIP
TC4423COE IC MOSFET DVR 3A DUAL HS 16-SOIC
GMC08DREN CONN EDGECARD 16POS .100 EYELET
TC4424COE IC MOSFET DVR 3A DUAL HS 16-SOIC
FESB8GT-E3/45 DIODE 8A 400V 50NS SGL TO263AB
相关代理商/技术参数
参数描述
NCP5214MNR2 功能描述:DC/DC 开关控制器 2-IN-1 NOTBOOK DDR CNTLR RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK
NCP5214MNR2G 功能描述:DC/DC 开关控制器 2-IN-1 NOTBOOK DDR CNTLR RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK
NCP5215 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Synchronous Buck Controller for Notebook Power System
NCP5215MNR2G 功能描述:直流/直流开关转换器 BUCK CONTROLLER RoHS:否 制造商:STMicroelectronics 最大输入电压:4.5 V 开关频率:1.5 MHz 输出电压:4.6 V 输出电流:250 mA 输出端数量:2 最大工作温度:+ 85 C 安装风格:SMD/SMT
NCP5217A 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Single Synchronous Step-Down Controller