参数资料
型号: NCV1124DR2G
厂商: ON Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: IC SENSOR DUAL VAR-RELUCT 8-SOIC
标准包装: 2,500
类型: 可变磁阻
输入类型: 逻辑
输出类型: 逻辑
接口: 双,串联或并联
电流 - 电源: 5mA
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
其它名称: NCV1124DR2G-ND
NCV1124DR2GOSTR
NCV1124
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Value
Unit
Storage Temperature Range
65 to 150
°C
Ambient Operating Temperature
40 to 125
°C
Supply Voltage Range (continuous)
0.3 to 7.0
V
Input Voltage Range (at any input, R1 = R2 = 22 k)
250 to 250
V
Maximum Junction Temperature
150
°C
ESD Susceptibility (Human Body Model)
2.0
kV
Lead Temperature Soldering:
Reflow: (SMD styles only) (Note 1)
240 peak
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 60 second maximum above 183
°C.
ELECTRICAL CHARACTERISTICS (4.5 V < VCC < 5.5 V, 40°C < TA < 125°C, VDIAG = 0; unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
VCC SUPPLY
Operating Current Supply
VCC = 5.0 V
5.0
mA
Sensor Inputs
Input Threshold Positive
VDIAG = Low
VDIAG = High
135
160
185
mV
Input Threshold Negative
VDIAG = Low
VDIAG = High
185
135
160
135
185
mV
Input Bias Current (INP1, INP2)
VIN = 0.336 V
16
11
6.0
mA
Input Bias Current (DIAG)
VDIAG = 0 V
1.0
mA
Input Bias Current Factor (KI)
(INAdj = INP × KI)
VIN = 0.336 V, VDIAG = Low
VIN = 0.336 V, VDIAG = High
152
100
155
157
%INP
Bias Current Matching
INP1 or INP2 to INAdj, VIN = 0.336 V
1.0
0
1.0
mA
Input Clamp Negative
IIN = 50 mA
IIN = 12 mA
0.5
0.25
0.30
0
V
Input Clamp Positive
IIN = +12 mA
5.0
7.0
9.8
V
Output Low Voltage
IOUT = 1.6 mA
0.2
0.4
V
Output High Voltage
IOUT = 1.6 mA
VCC 0.5
VCC 0.2
V
Mode Change Time Delay
0
20
ms
Input to Output Delay
IOUT = 1.0 mA
1.0
20
ms
Output Rise Time
CLOAD = 30 pF
0.5
2.0
ms
Output Fall Time
CLOAD = 30 pF
0.05
2.0
ms
OpenSensor Positive Threshold
VDIAG = High, RIN(Adj) = 40 k. Note 2
29.4
54
86.9
k
W
Logic Inputs
DIAG Input Low Threshold
0.2
× VCC
V
DIAG Input High Threshold
0.7
× VCC
V
DIAG Input Resistance
VIN = 0.3 × VCC , VCC = 5.0 V
VIN = VCC, VCC = 5.0 V
8.0
22
70
k
W
k
W
2. This parameter is guaranteed by design, but not parametrically tested in production.
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