- 您现在的位置：买卖IC网 > PDF目录11670 > NCV1124DR2G (ON Semiconductor)IC SENSOR DUAL VAR-RELUCT 8-SOIC PDF资料下载
参数资料
| 型号： | NCV1124DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | IC SENSOR DUAL VAR-RELUCT 8-SOIC |
| 标准包装： | 2,500 |
| 类型： | 可变磁阻 |
| 输入类型： | 逻辑 |
| 输出类型： | 逻辑 |
| 接口： | 双，串联或并联 |
| 电流 - 电源： | 5mA |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NCV1124DR2G-ND NCV1124DR2GOSTR |
NCV1124
http://onsemi.com
6
APPLICATION INFORMATION
Referring to Figure 2, the following will be a design
example given these system requirements:
RRS + 1.5 kW (u 12 kW is considered open)
VRS(MAX) + 120 Vpk
VRS(MIN) + 250 mVpk
FVRS + 10 kHz @ VRS(MIN) + 40 Vpkpk
1. Determine tradeoff between R1 value and power
rating. (use 1/2 watt package)
PD +
120
2
R1
t 1 2W
Set R1 = 15 k. (The clamp current will then be 120/15 k
= 8.0 mA, which is less than the 12 mA limit.)
2. Determine RAdj
Set RAdj as close to R1 + RRS as possible.
Therefore, RAdj = 17 k.
3. Determine VRS(+TRP) using equation (7).
VRS(+TRP) + 11mA
17 k
* 11mA(15 k ) 1.5 k) ) 160 m
VRS(+TRP) + 166 mV typical
(easily meets 250 mV minimum)
4. Calculate worst case VRS(+TRP)
Examination of equation (7) and the spec reveals the worst
case trip voltage will occur when:
VHYS = 180 mV
INAdj = 16 mA
INP1 = 15
mA
R1 = 14.25 k (5% low)
RAdj = 17.85 k (5% High)
VRS(+)MAX + 16 mA(17.85 k)
* 15mA(14.25 k ) 1.5 k) ) 180 mV
+ 229 mV
which is still less than the 250 mV minimum amplitude of
the input.
5. Calculate C1 for low pass filtering
Since the sensor guarantees 40 Vpkpk @ 10 kHz, a low
pass filter using R1 and C1 can be used to eliminate high
frequency noise without affecting system performance.
Gain Reduction
+ 0.29 V
20 V
+ 0.0145 +*36.7 dB
Therefore, a cutoff frequency, fC, of 145 Hz could be
used.
C1
v
1
2
pfCR1
v 0.07 mF
Set C1 = 0.047
mF.
6. Calculate the minimum RRS that will be indicated as
an open circuit. (DIAG = 5.0 V)
Rearranging equation (7) gives
RRS +
VHYS ) [INP1
KI
RAdj]
* VRS(+TRP)
INP1
* R1
But, VRS = 0 during this test, so it drops out.
Using the following as worst case Low and High:
Worst Case Low (RRS)
Worst Case High (RRS)
INAdj
23.6
mA = 15 mA × 1.57
10.7
mA = 7.0 mA × 1.53
RAdj
16.15 k
17.85 k
VHYS
135 mV
185 mV
INP1
16
mA
6.0
mA
R1
15.75 k
14.25 k
KI
1.57
1.53
RRS +
135 mV
) 23.6 mA
16.15 k
16
mA
* 15.75 k
+ 16.5 k
Therefore,
RRS(MIN) + 16.5 k (meets 12 k system spec)
and,
RRS(MAX) +
185 mV
) 10.7 mA
17.85 k
6.0
mA
* 14.25 k
+ 48.4 k
相关PDF资料 |
PDF描述 |
|---|---|
| MS27508E24B1PB | CONN RCPT 128POS BOX MNT W/PINS |
| D38999/26WJ4PN | CONN PLUG 56POS STRAIGHT W/PINS |
| D38999/20JJ61HN | CONN RCPT 61POS WALL MNT W/PINS |
| VE-JNZ-IW-F3 | CONVERTER MOD DC/DC 2V 40W |
| D38999/20WH21SN | CONN RCPT 21POS WALL MNT W/SCKT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV1406SNT1G | 功能描述:直流/直流开关转换器 STEP-UP DC-DC CONVERTER RoHS:否 制造商:STMicroelectronics 最大输入电压:4.5 V 开关频率:1.5 MHz 输出电压:4.6 V 输出电流:250 mA 输出端数量:2 最大工作温度:+ 85 C 安装风格:SMD/SMT |
| NCV1413B | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage, High Current Darlington Transistor Arrays |
| NCV1413BDR2 | 功能描述:达林顿晶体管 High Voltage High RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| NCV1413BDR2G | 功能描述:达林顿晶体管 High Voltage High Current Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| NCV1413BDR2G/H | 制造商:ON Semiconductor 功能描述: |
发布紧急采购，3分钟左右您将得到回复。