参数资料
型号: NCV7361ADR2G
厂商: ON Semiconductor
文件页数: 5/27页
文件大小: 0K
描述: IC REG LDO 5V 50MA 8-SOIC
产品变化通告: Product Discontinuation 27/Jan/2012
标准包装: 2,500
稳压器拓扑结构: 正,固定式
输出电压: 5V
输入电压: 5.25 V ~ 18 V
稳压器数量: 1
电流 - 输出: 50mA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
NCV7361A
ELECTRICAL CHARACTERISTICS (5.25 V v V SUP v 18 V, ? 40 ° C v T A v 125 ° C unless otherwise noted)
Characteristic
Symbol
Condition
Min
Typ
Max
Unit
LIN BUS INTERFACE
Receive Threshold
V thr_rec ,
V thr_dom
0.4 *V SUP
?
0.6
*V SUP
V
Receive Center Point
V thr_cnt = (V thr_rec + V thr_dom )/2
Receive Hysteresis
V thr_hys = V thr_rec ? V thr_dom
V thr_cnt
V thr_hys
7.0 V v V SUP v 18 V
0.475
*V SUP
0.12 *V SUP
0.5
*V SUP
0.135
*V SUP
0.525
*V SUP
0.15
*V SUP
BUS Input Current (Recessive)
(Note 7)
BUS Input Current (Recessive)
BUS Input Current (Recessive)
BUS Pullup Resistor
BUS Output Voltage (Dominant)
(Note 7)
BUS Output Voltage (Recessive)
(Notes 7 and 8)
BUS Current Limit
I INBUSR
? I INBUSR
? I INBUSR
R BUSpu
V BUSdom
V BUSrec
I LIM
8.0 v V BUS v 18 V,
V SUP = V BUS ? 0.7 V, TxD = 4.5 V
V SUP = 0 V, V BUS = ? 12 V
V SUP = Open, V BUS = ? 18 V
?
7.0 v V SUP v 18 V, TxD = 0 V,
R L = 500 W
7.0 v V SUP v 18 V, TxD = 4.5 V
V BUS > 2.5 V, TxD = 0 V
?
? 1.0
? 1.0
20
?
0.8 *V SUP
40
?
?
?
30
?
?
?
20
?
?
47
1.2
?
120
m A
mA
mA
k W
V
V
mA
TxD
Pullup Resistance
Input Low Level
Input High Level
R pu_TxD
V IL
V IH
?
?
?
9.5
?
3.75
15
?
?
21
1.25
?
k W
V
V
RxD
Output Voltage Low
Output Voltage High
V OL
V OH
I OUT = 1.0 mA
I OUT = ? 1.0 mA
?
4.2
?
?
0.8
?
V
V
7. See Figures 7, 8, and 9 for test setup.
8. The recessive voltage on BUS should not be less than 80% direct battery . The LIN specification requires an external reverse battery diode
between the battery and V SUP . V SUP = V BAT ? 0.7 V.
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