参数资料
| 型号： | NCV7703BD2R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 15/16页 |
| 文件大小： | 0K |
| 描述： | IC DVR HALF BRIDGE TRPL 14SOIC |
| 标准包装： | 2,500 |
| 类型： | 半桥 |
| 输入类型： | SPI |
| 输出数： | 3 |
| 导通状态电阻： | 800 毫欧 |
| 电流 - 输出 / 通道： | 500mA |
| 电流 - 峰值输出： | 1A |
| 电源电压： | 5.5 V ~ 40 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOICN |
| 包装： | 带卷 (TR) |
NCV7703B
CSB
SCLK
CSB
SCLK
CSB
SCLK
CSB
SCLK
NCV7703B
NCV7703B
NCV7708B
NCV7708B
SI
SO
SI
SO
SI
SO
SI
SO
Figure 13. Daisy Chain Operation
Parallel Control
A more efficient way to control multiple SPI compatible
devices is to connect them in a parallel fashion and allow
each device to be controlled in a multiplex mode. The
diagram below shows a typical connection between the
microprocessor or microcontroller and multiple SPI
compatible devices. In a daisy chain configuration, the
programming information for the last device in the serial
string must first pass through all the previous devices. The
parallel control setup eliminates that requirement, but at the
cost of additional control pins from the microprocessor for
each individual CSB pin for each controllable device. Serial
data is only recognized by the device that is activated
through its respective CSB pin.
NCV7703B
V S
OUTx
SI
SCLK
SI
SCLK
SO
CSB
SO
OUT1
OUT2
OUT3
CSB
chip1
CSB
chip2
NCV7703B
SI
SCLK
OUTx
CSB
chip3
CSB
SO
OUT1
OUT2
OUT3
GND
NCV7703B
SI
SCLK
CSB
SO
OUT1
OUT2
Figure 14. Parallel Control
OUT3
Figure 15. High?Side / Low?Side Application Drawing
Any combination of H?bridge and high or low?side
Additional Application Setup
In addition to the cascaded H?Bridge application shown
drivers can be designed in. This allows for flexibility in
many systems.
in Figure 1, the NCV7703B can also be used as a high?side
driver or low?side driver (Figure 15).
http://onsemi.com
15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV7703D2G | 功能描述:功率驱动器IC TRPL HALF BRDGE DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7703D2R2G | 功能描述:功率驱动器IC TRPL HALF BRDGE DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7703D2R2G/H | 制造商:ON Semiconductor 功能描述: |
| NCV7703GEVB | 功能描述:电源管理IC开发工具 EVAL BRD RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCV7707DQG | 制造商:ON Semiconductor 功能描述:EACH / DOOR-MODULE DRIVER-IC |
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