参数资料
| 型号： | NCV7703BD2R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/16页 |
| 文件大小： | 0K |
| 描述： | IC DVR HALF BRIDGE TRPL 14SOIC |
| 标准包装： | 2,500 |
| 类型： | 半桥 |
| 输入类型： | SPI |
| 输出数： | 3 |
| 导通状态电阻： | 800 毫欧 |
| 电流 - 输出 / 通道： | 500mA |
| 电流 - 峰值输出： | 1A |
| 电源电压： | 5.5 V ~ 40 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOICN |
| 包装： | 带卷 (TR) |
NCV7703B
MAXIMUM RATINGS
Rating
Value
Unit
Power Supply Voltage (V S )
(DC)
(AC), t < 500 ms, Ivs > ?2 A
Output Pin OUTx
(DC)
(AC), t < 500 ms, IOUTx > ?2 A
?0.3 to 40
?1
?0.3 to 40
?1
V
V
Pin Voltage
(Logic Input pins, SI, SCLK, CSB, SO, EN, V CC )
?0.3 to 7
V
Output Current (OUTx)
(DC)
(AC) (50 ms pulse, 1 s period)
?1.8 to 1.8
Internally Limited
A
Electrostatic Discharge, Human Body Model,
V S , OUT1, OUT2, OUT3 (Note 3)
Electrostatic Discharge, Human Body Model,
all other pins (Note 3)
Electrostatic Discharge, Machine Model,
V S , OUT1, OUT2, OUT3 (Note 3)
Electrostatic Discharge, Machine Model,
all other pins (Note 3)
Operating Junction Temperature
Storage Temperature Range
Moisture Sensitivity Level (MAX 260 ° C Processing)
6
2
300
200
?40 to 150
?55 to 150
MSL3
kV
kV
V
V
° C
° C
?
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Thermal Parameters
Test Conditions (Typical Value)
Unit
14 Pin Fused SOIC Package
min?pad board
(Note 1)
1 ″ pad board
(Note 2)
Junction?to?Lead (psi?JL8, Y JL8 ) or Pins 1, 7, 8, 14
Junction?to?Ambient (R q JA , q JA )
23
122
22
83
° C /W
° C /W
1. 1?oz copper, 67 mm 2 copper area, 0.062 ″ thick FR4.
2. 1?oz copper, 645 mm 2 copper area, 0.062 ″ thick FR4.
3. This device series incorporates ESD protection and is characterized by the following methods:
ESD HBM according to AEC?Q100?002 (EIA/JESD22?A114)
ESD MM according to AEC?Q100?003 (EIA/JESD22?A115)
http://onsemi.com
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV7703D2G | 功能描述:功率驱动器IC TRPL HALF BRDGE DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7703D2R2G | 功能描述:功率驱动器IC TRPL HALF BRDGE DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7703D2R2G/H | 制造商:ON Semiconductor 功能描述: |
| NCV7703GEVB | 功能描述:电源管理IC开发工具 EVAL BRD RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCV7707DQG | 制造商:ON Semiconductor 功能描述:EACH / DOOR-MODULE DRIVER-IC |
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