参数资料
型号: NCV7703BD2R2G
厂商: ON Semiconductor
文件页数: 8/16页
文件大小: 0K
描述: IC DVR HALF BRIDGE TRPL 14SOIC
标准包装: 2,500
类型: 半桥
输入类型: SPI
输出数: 3
导通状态电阻: 800 毫欧
电流 - 输出 / 通道: 500mA
电流 - 峰值输出: 1A
电源电压: 5.5 V ~ 40 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOICN
包装: 带卷 (TR)
NCV7703B
ELECTRICAL CHARACTERISTICS
(?40 ° C ≤ T J ≤ 150 ° C, 5.5 V ≤ V S ≤ 40 V, 3 V ≤ V CC ≤ 5.25 V, EN = V CC , unless otherwise specified)
SERIAL PERIPHERAL INTERFACE
Timing Chart #
Characteristic
SCLK Frequency
SCLK Clock Period
Maximum Input Capacitance (Note 8)
SCLK High Time
SCLK Low Time
SCLK Setup Time
Conditions
V CC = 5 V
V CC = 5 V
V CC = 3.3 V
SI, SCLK
(See Figure 6)
?
?
?
?
1
2
3
Min
?
200
500
?
85
85
85
Typ
?
?
?
?
?
?
?
Max
5
?
?
15
?
?
?
Unit
MHz
ns
pF
ns
ns
ns
4
85
?
?
SI Setup Time
SI Hold Time
CSB Setup Time
CSB High Time (Note 9)
SO enable after CSB falling edge (Note 8)
SO disable after CSB rising edge (Note 8)
11
12
5
6
7
8
9
50
50
100
100
200
?
?
?
?
?
?
?
?
?
?
?
?
?
?
50
50
ns
ns
ns
ns
ns
ns
SO Rise Time
SO Fall Time
SO Valid Time (Note 8)
V CC = 5 V, C load = 40 pF
V CC = 5 V, C load = 40 pF
SCLK ↑ to SO 50%
?
?
10
?
?
?
10
10
20
25
25
50
ns
ns
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Not tested in production.
9. Minimum high time of CSB between two successive SPI commands.
http://onsemi.com
8
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