参数资料
| 型号： | NCV8402ADDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE 8-SOIC |
| 标准包装： | 1 |
| 系列： | SMARTDISCRETES™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 165 毫欧 |
| 电流 - 输出 / 通道： | 2A |
| 电流 - 峰值输出： | 4.8A |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCV8402DDR2GOSDKR NCV8402DDR2GOSDKR-ND |
NCV8402D, NCV8402AD
Dual Self-Protected
Low-Side Driver with
Temperature and Current
Limit
NCV8402D/AD is a dual protected Low ? Side Smart Discrete device.
http://onsemi.com
The protection features include overcurrent, overtemperature, ESD and
integrated Drain ? to ? Gate clamping for overvoltage protection. This
device offers protection and is suitable for harsh automotive
environments.
V (BR)DSS
(Clamped)
42 V
R DS(ON) TYP
165 m W @ 10 V
I D MAX
2.0 A*
Protection
Features
? Short ? Circuit Protection
? Thermal Shutdown with Automatic Restart
? Overvoltage Protection
? Integrated Clamp for Inductive Switching
? ESD Protection
? dV/dt Robustness
? Analog Drive Capability (Logic Level Input)
? AEC ? Q101 Qualified and PPAP Capable
? NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
? These Devices are Pb ? Free and are RoHS Compliant
*Max current limit value is dependent on input
condition.
Drain
Overvoltage
Gate
Input
ESD Protection
Temperature Current Current
Limit Limit Sense
Source
xxxxxx
ALYW
G
Typical Applications
? Switch a Variety of Resistive, Inductive and Capacitive Loads
? Can Replace Electromechanical Relays and Discrete Circuits
? Automotive / Industrial
8
1
xxxxxx
A
L
Y
W
G
MARKING DIAGRAM
8
SO ? 8
CASE 751
STYLE 11
1
= V8402D or 8402AD
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb ? Free Package
PIN ASSIGNMENT
Source 1
Gate 1
Source 2
Gate 2
1
8
Drain 1
Drain 1
Drain 2
Drain 2
ORDERING INFORMATION
Device
Package
Shipping ?
NCV8402DDR2G SOIC ? 8
NCV8402ADDR2G (Pb ? Free)
2500/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
November, 2011 ? Rev. 1
1
Publication Order Number:
NCV8402D/D
相关PDF资料 |
PDF描述 |
|---|---|
| NCV8402ASTT1G | IC DVR LO SIDE 42V 2.0A SOT223-4 |
| NCV8402STT1G | IC DVR LOW SIDE SOT-223-4 |
| NCV8403ASTT1G | IC DVR LOW SIDE SOT-223-4 |
| NCV8403STT1G | IC DRIVER LOW SIDE SOT-223-4 |
| NCV8405ASTT1G | IC DRIVER LOW SIDE SOT-223-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8402ASTT1G | 功能描述:MOSFET 42V 2.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402ASTT3G | 功能描述:MOSFET 42V 2.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Self-Protected Low-Side Driver with Temperature and Current Limit |
| NCV8402DDR2G | 功能描述:MOSFET N-Channel MOSFET 2.0 A 42V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402STT1G | 功能描述:MOSFET SELF-PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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