参数资料
| 型号： | NCV8402ADDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE 8-SOIC |
| 标准包装： | 1 |
| 系列： | SMARTDISCRETES™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 165 毫欧 |
| 电流 - 输出 / 通道： | 2A |
| 电流 - 峰值输出： | 4.8A |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCV8402DDR2GOSDKR NCV8402DDR2GOSDKR-ND |
NCV8402D, NCV8402AD
PACKAGE DIMENSIONS
SOIC ? 8
CASE 751 ? 07
ISSUE AK
? Y ?
B
? X ?
8
1
A
5
4
S
0.25 (0.010)
M
Y
M
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751 ? 01 THRU 751 ? 06 ARE OBSOLETE. NEW
STANDARD IS 751 ? 07.
? Z ?
H
G
D
0.25 (0.010)
M
Z Y
C
S
X
SEATING
PLANE
0.10 (0.004)
S
N
X 45 _
M
J
DIM
A
B
C
D
G
H
J
K
M
N
S
MILLIMETERS
MIN MAX
4.80 5.00
3.80 4.00
1.35 1.75
0.33 0.51
1.27 BSC
0.10 0.25
0.19 0.25
0.40 1.27
0 _ 8 _
0.25 0.50
5.80 6.20
INCHES
MIN MAX
0.189 0.197
0.150 0.157
0.053 0.069
0.013 0.020
0.050 BSC
0.004 0.010
0.007 0.010
0.016 0.050
0 _ 8 _
0.010 0.020
0.228 0.244
SOLDERING FOOTPRINT*
1.52
0.060
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
7.0
0.275
0.6
0.024
4.0
0.155
1.270
0.050
SCALE 6:1
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 Toll Free USA/Canada
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http://onsemi.com
10
ON Semiconductor Website : www.onsemi.com
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For additional information, please contact your local
Sales Representative
NCV8402D/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8402ASTT1G | 功能描述:MOSFET 42V 2.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402ASTT3G | 功能描述:MOSFET 42V 2.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Self-Protected Low-Side Driver with Temperature and Current Limit |
| NCV8402DDR2G | 功能描述:MOSFET N-Channel MOSFET 2.0 A 42V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402STT1G | 功能描述:MOSFET SELF-PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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