参数资料
| 型号： | NCV8402ADDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE 8-SOIC |
| 标准包装： | 1 |
| 系列： | SMARTDISCRETES™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 165 毫欧 |
| 电流 - 输出 / 通道： | 2A |
| 电流 - 峰值输出： | 4.8A |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCV8402DDR2GOSDKR NCV8402DDR2GOSDKR-ND |
NCV8402D, NCV8402AD
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage Internally Clamped
Symbol
V DSS
Value
42
Unit
V
Drain ? to ? Gate Voltage Internally Clamped
Gate ? to ? Source Voltage
(R G = 1.0 M W )
V DGR
V GS
42
" 14
V
V
Continuous Drain Current
I D
Internally Limited
Power Dissipation
Thermal Resistance
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
Junction ? to ? Ambient Steady State (Note 1)
Junction ? to ? Ambient Steady State (Note 2)
P D
R q JA
R q JA
0.8
1.62
157
77
W
° C/W
Single Pulse Drain ? to ? Source Avalanche Energy
(V DD = 32 V, V G = 5.0 V, I PK = 1.0 A, L = 300 mH, R G(ext) = 25 W )
E AS
150
mJ
Load Dump Voltage
(V GS = 0 and 10 V, R I = 2.0 W , R L = 9.0 W , t d = 400 ms)
V LD
87
V
Operating Junction and Storage Temperature
T J , T stg
? 55 to 150
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface ? mounted onto min pad FR4 PCB, (Cu area = 40 sq. mm, 1 oz.).
2. Surface ? mounted onto 1 ″ sq. FR4 board (Cu area = 625 sq. mm, 2 oz.).
+
I D
DRAIN
I G
+
VGS
?
GATE
SOURCE
VDS
?
Figure 1. Voltage and Current Convention
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8402ASTT1G | 功能描述:MOSFET 42V 2.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402ASTT3G | 功能描述:MOSFET 42V 2.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Self-Protected Low-Side Driver with Temperature and Current Limit |
| NCV8402DDR2G | 功能描述:MOSFET N-Channel MOSFET 2.0 A 42V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8402STT1G | 功能描述:MOSFET SELF-PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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