参数资料
| 型号： | NCV8612BMNR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 12/26页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 5V/3.3V/ADJ 20DFN |
| 标准包装： | 2,500 |
| 稳压器拓扑结构： | 正，固定式和可调式 |
| 输出电压： | 5V，3.3V，可调式 |
| 输入电压： | 7 V ~ 18 V |
| 稳压器数量： | 3 |
| 电流 - 输出： | 120mA，80mA，400mA |
| 电流 - 限制（最小）： | 180mA，120mA，500mA |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VFDFN 裸露焊盘 |
| 供应商设备封装： | 20-QFN（6x5） |
| 包装： | 带卷 (TR) |
NCV8612B
pull output stage, with V PP as the high signal. In the event
of the part shutting down via Battery voltage or Enable, the
Reset output will be pulled to ground.
The input and output conditions that control the Reset
Output and the relative timing are illustrated in Figure 5,
Reset Timing. Output voltage regulation must be maintained
for the delay time before the reset output signals a valid
condition. The delay for the reset output is defined as the
amount of time it takes the timing capacitor on the delay pin
to charge from a residual voltage of 0 V to the Delay timing
threshold voltage V D of 2 V. The charging current for this is
I D of 5 m A. By using typical IC parameters with a 10 nF
capacitor on the Delay Pin, the following time delay is
derived:
t RD = C D * V DU / I D
t RD = 10 nF * (2 V)/ (5 m A) = 4 ms
Other time delays can be obtained by changing the C D
capacitor value. The Delay Time can be reduced by
decreasing the capacitance of C D . Using the formula above,
delay can be reduced as desired. Leaving the Delay Pin open
is not desirable as it can result in unwanted signals being
coupled onto the pin.
VBATT_MON and Warning Flags
The NCV8612B is equipped with High Voltage
Detection, Brown Out Detection, and High Temperature
Detection circuitry. The Overvoltage Shutdown, High
Voltage, and Brown Out Detection circuitry are all run off
the VBATT_MON input. If this functionality is not desired,
grounding of the VBATT_MON pin will turn off the
functions.
The HV_DET and BO_DET signals are in a high
impedance state until the VBATT_MON circuitry reaches it
minimum operating voltage, typically 1.0 V to 2.5 V. At that
point the BO_DET signal will be held low, while the
HV_DET signal will go high. The BO_DET signal will go
high once the VBATT_MON signal reaches the Brown Out
Threshold, typically 7 V to 8 V. The BO_DET signal will
stay high until the VBATT_MON voltage drops below the
until the VBATT_MON voltage rises above the HV_DET
threshold, typically 18 V to 20 V. The HV_DET signal will
reassert high once the HV_DET signal crosses the HV_DET
threshold going low.
The NCV8612B is also equipped with a Hot Flag pin
which indicates when the junction temperature is
approaching thermal shutdown. The Hot Flag signal will
remain high as long as the junction temperature is below the
Hot flag threshold, typically 140 ° C to 160 ° C. This pin is
intended as a warning that the junction temperature is
approaching the Thermal Shutdown threshold, which is
typically 160 ° C to 180 ° C. The Hot Flag signal will remain
low until the junction temperature drops below the Hot Flag
threshold.
The Hot_Flag circuitry does not run off the
VBATT_MON Pin, and can not be disabled by grounding
VBATT_MON.
Each of the three warning circuits utilizes a push ? pull
output stage. The high signal is provided by V PP . V PP is
internally tied to V OUT1
Overvoltage Shutdown
The NCV8612B is equipped with overvoltage shutdown
(OVS) functionality. The OVS is designed to turn on when
the VBATT_MON signal crosses 19 V. If the
VBATT_MON pin is tied to ground, the OVS functionality
will be disabled.
When OVS is triggered, LDO1 and LDO2 will both be
shut down. LDO3 is run off a separate input voltage line,
VIN_S3, and will not shutdown in this condition. Once the
OVS condition has passed, LDO1 and LDO2 will both turn
back on.
The VIN ? H line is equipped with a bleed transistor to
prevent a continued OVS condition on the chip once the high
battery condition has subsided. This transistor is needed to
discharge the high voltage from the VIN ? H hold ? up
capacitor. This transistor will only turn on when an OVS is
detected on ? chip, and will turn off as soon as the OVS
condition is no longer detected by the chip.
Brown Out Threshold. The HV_DET signal will stay high
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8612MNR2G | 功能描述:低压差稳压器 - LDO MULTIPLE OUTPUT LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV8613 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ultra-Low Iq Automotive System Power Supply IC Power Saving Triple-Output Linear Regulator |
| NCV8613B | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ultra-Low Iq Automotive System Power Supply IC Power Saving Triple-Output Linear Regulator |
| NCV8613BMNR2G | 功能描述:线性稳压器 - 标准 ANA MULTIPLE OUTPUT LDO RoHS:否 制造商:STMicroelectronics 输出类型: 极性: 输出电压:1.8 V 输出电流:150 mA 负载调节: 最大输入电压:5.5 V 线路调整率: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-323-5L |
| NCV8613MNR2G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ultra-Low Iq Automotive System Power Supply IC Power Saving Triple-Output Linear Regulator |
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