参数资料
| 型号： | NCV8612BMNR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/26页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 5V/3.3V/ADJ 20DFN |
| 标准包装： | 2,500 |
| 稳压器拓扑结构： | 正，固定式和可调式 |
| 输出电压： | 5V，3.3V，可调式 |
| 输入电压： | 7 V ~ 18 V |
| 稳压器数量： | 3 |
| 电流 - 输出： | 120mA，80mA，400mA |
| 电流 - 限制（最小）： | 180mA，120mA，500mA |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VFDFN 裸露焊盘 |
| 供应商设备封装： | 20-QFN（6x5） |
| 包装： | 带卷 (TR) |
NCV8612B
MAXIMUM RATINGS (Voltages are with respects to GND unless noted otherwise)
Rating
Maximum DC Voltage
Peak Transient
Maximum DC Voltage
Maximum DC Voltage
Maximum DC Voltage
Symbol
VIN ? B, VIN ? A, ASO_RAIL,
VBATT_MON, VIN_S3, EN, IGNIN
VIN ? B, VIN ? A, ASO_RAIL,
VBATT_MON, VIN_S3, EN, IGNIN
VIN ? H
IGNOUT, V PP , HV_DET, BO_DET,
HOT_FLG, RST, DLY, V OUT1 , V OUT2
V OUT3
Max
40
45
24
7
10
Min
? 0.3
? 0.3
? 0.3
? 0.3
? 0.3
Unit
V
V
V
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL INFORMATION
Rating
Thermal Characteristic (Note 1)
Operating Junction Temperature Range
Maximum Storage Temperature Range
Moisture Sensitivity Level
Symbol
R q JA
T J
T STG
MSL
Min
40
? 40 to 150
? 55 to +150
1
Unit
° C/W
° C
° C
1. Values based on measurement of NCV8612B assembled on 2 ? layer 1 ? oz Cu thickness PCB with Copper Area of more than 645 mm 2 with
several thermal vias for improved thermal performance. Refer to CIRCUIT DESCRIPTION section for safe operating area.
ATTRIBUTES
Rating
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
ESD Capability, Charged Device Model (Note 2)
IGNIN ESD Capability, Human Body Model (Note 2)
IGNIN ESD Capability, Machine Model (Note 2)
IGNIN ESD Capability (Note 3)
Symbol
ESD HB
ESD MM
ESD CDM
ESD HB _IGNIN
ESD MM _IGNIN
ESD_IGNIN
Min
2
200
1
3
200
10
Unit
kV
V
kV
kV
V
kV
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model (HBM) tested per AEC ? Q100 ? 002 (EIA/JESD22 ? A114)
ESD Machine Model (MM) tested per AEC ? Q100 ? 003 (EIA/JESD22 ? A115)
ESD Charged Device Model (CDM) tested per EIA/JES D22/C101, Field Induced Charge Model
3. Device tested with external 10 k W series resistance and 1 nF storage capacitor.
http://onsemi.com
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相关PDF资料 |
PDF描述 |
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| NCV8612MNR2G | IC REG LDO 5V/3.3V/ADJ 20DFN |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8612MNR2G | 功能描述:低压差稳压器 - LDO MULTIPLE OUTPUT LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV8613 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ultra-Low Iq Automotive System Power Supply IC Power Saving Triple-Output Linear Regulator |
| NCV8613B | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ultra-Low Iq Automotive System Power Supply IC Power Saving Triple-Output Linear Regulator |
| NCV8613BMNR2G | 功能描述:线性稳压器 - 标准 ANA MULTIPLE OUTPUT LDO RoHS:否 制造商:STMicroelectronics 输出类型: 极性: 输出电压:1.8 V 输出电流:150 mA 负载调节: 最大输入电压:5.5 V 线路调整率: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-323-5L |
| NCV8613MNR2G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ultra-Low Iq Automotive System Power Supply IC Power Saving Triple-Output Linear Regulator |
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