参数资料
型号: NCV8612BMNR2G
厂商: ON Semiconductor
文件页数: 6/26页
文件大小: 0K
描述: IC REG LDO 5V/3.3V/ADJ 20DFN
标准包装: 2,500
稳压器拓扑结构: 正,固定式和可调式
输出电压: 5V,3.3V,可调式
输入电压: 7 V ~ 18 V
稳压器数量: 3
电流 - 输出: 120mA,80mA,400mA
电流 - 限制(最小): 180mA,120mA,500mA
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 20-VFDFN 裸露焊盘
供应商设备封装: 20-QFN(6x5)
包装: 带卷 (TR)
NCV8612B
SUPPLY VOLTAGES AND SYSTEM SPECIFICATION ELECTRICAL CHARACTERISTICS (7 V < ASO_RAIL < 18 V, VIN ? H
= VIN ? B w ASO_RAIL, V PP = 5 V, VIN_S3 tied to ASO_RAIL, VBATT_MON = 0 V, EN = 5 V, IGNIN = 0 V, I SYS = 3 mA (Note 6))
Minimum/Maximum values are valid for the temperature range ? 40 ° C v T J v 150 ° C unless noted otherwise. Min/Max values are
guaranteed by test, design or statistical correlation.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
IGNITION BUFFER
IGNOUT Voltage Low
IGNIN = 5 V, 10 k W Pullup to 5 V
0.4
V
IGNOUT Leakage Current
T J = 25 ° C, IGNOUT = 5 V
0.1
0.5
m A
VBATT MONITOR
VBATT_MON Quiescent Current
VBATT_MON Shutdown Current
T J = 25 ° C, VBATT_MON = 13.2 V
T J = 25 ° C, EN = 0 V,
VBATT_MON = 13.2 V
3
5
0.5
m A
m A
VBATT_MON Minimum Operating Voltage
Threshold where BO_DET and HV_DET
signals become valid
1.0
2.0
2.5
V
VBATT_MON Hysteresis
0.25
V
HV_DET Voltage High
HV_DET Voltage Low
10 k W Pulldown to GND
VBATT_MON Tied to ASO_RAIL
10 k W Pullup to 5 V
VBATT_MON Tied to ASO_RAIL
V OUT1 ?
0.5
0.4
V
V
HV_DET Threshold
VBATT_MON Rising
18
20
V
HV_DET Hysteresis
VBATT_MON Falling
0.2
0.35
0.5
V
BO_DET Voltage High
BO_DET Voltage Low
10 k W Pulldown to GND
VBATT_MON Tied to ASO_RAIL
10 k W Pullup to 5 V
VBATT_MON Tied to ASO_RAIL
V OUT1 ?
0.5
0.4
V
V
BO_DET Threshold
BO_DET Hysteresis
VBATT_MON Falling
VBATT_MON Rising
7
0.2
7.5
0.35
8
0.5
V
V
4.
5.
6.
i q is equal to I VIN ? B + I VIN ? H ? I SYS
I SHDN is equal to I VIN ? B + I VIN ? H
I SYS is equal to I OUT1 + I OUT2 + I OUT3
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