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参数资料
| 型号： | NCV8871SEPGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCV8871SEP BOOST CTLR |
| 设计资源： | NCV8871SEPGEVB Schematic NCV8871SEPGEVB Gerber File NCV8871SEPGEVB Bill Of Materials |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 12V |
| 电流 - 输出： | 2A |
| 输入电压： | 6 V ~ 40 V |
| 稳压器拓扑结构： | 升压 |
| 频率 - 开关： | 170kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCV8871 |
| 其它名称： | NCV8871SEPGEVBOS |
NCV8871
I L,AVG +
I L,peak + I L,avg )
V IN(min)
C OUT f
Q g(total) v
I D(max) + I out
I Cout(RMS) + I OUT
R upper + R lower
The maximum average inductor current can be calculated
as follows:
V OUT I OUT(max)
V IN(min) h
The Peak Inductor current can be calculated as follows:
D I L,max
2
Where: I L,peak : Peak inductor current value [A]
4. Select Output Capacitors
The output capacitors smooth the output voltage and
reduce the overshoot and undershoot associated with line
transients. The steady state output ripple associated with the
output capacitors can be calculated as follows:
V OUT(ripple) +
I OUT(max) V OUT * V IN(min) I OUT(max) V OUT R ESR
)
The capacitors need to survive an RMS ripple current as
follows:
V OUT * V IN(min)
V IN(min)
The use of parallel ceramic bypass capacitors is strongly
encouraged to help with the transient response.
5. Select Input Capacitors
The input capacitor reduces voltage ripple on the input to
the module associated with the ac component of the input
current.
V IN(min) 2 D WC
I Cin(RMS) +
L f s V OUT 2 3
6. Select Feedback Resistors
The feedback resistors form a resistor divider from the
output of the converter to ground, with a tap to the feedback
pin. During regulation, the divided voltage will equal V ref .
The lower feedback resistor can be chosen, and the upper
feedback resistor value is calculated as follows:
V out * V ref
V ref
The total feedback resistance (R upper + R lower ) should be in
the range of 1 k W – 100 k W .
7. Select Compensator Components
Current Mode control method employed by the NCV8871
allows the use of a simple, Type II compensation to optimize
the dynamic response according to system requirements.
8. Select MOSFET(s)
In order to ensure the gate drive voltage does not drop out
the MOSFET(s) chosen must not violate the following
inequality:
I drv
f s
Where: Q g(total) : Total Gate Charge of MOSFET(s) [C]
I drv : Drive voltage current [A]
f s : Switching Frequency [Hz]
The maximum RMS Current can be calculated as follows:
D
D
The maximum voltage across the MOSFET will be the
maximum output voltage, which is the higher of the
maximum input voltage and the regulated output voltaged:
V Q(max) + V OUT(max)
9. Select Diode
The output diode rectifies the output current. The average
current through diode will be equal to the output current:
I D(avg) + I OUT(max)
Additionally, the diode must block voltage equal to the
higher of the output voltage and the maximum input voltage:
V D(max) + V OUT(max)
The maximum power dissipation in the diode can be
calculated as follows:
P D + V f (max) I OUT(max)
Where: P d : Power dissipation in the diode [W]
V f(max) : Maximum forward voltage of the diode [V]
Low Voltage Operation
If the input voltage drops below the UVLO or MOSFET
threshold voltage, another voltage may be used to power the
device. Simply connect the voltage you would like to boost
to the inductor and connect the stable voltage to the VIN pin
of the device. In boost configuration, the output of the
converter can be used to power the device. In some cases it
may be desirable to connect 2 sources to VIN pin, which can
be accomplished simply by connecting each of the sources
through a diode to the VIN pin.
http://onsemi.com
11
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