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参数资料
| 型号： | NCV8871SEPGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCV8871SEP BOOST CTLR |
| 设计资源： | NCV8871SEPGEVB Schematic NCV8871SEPGEVB Gerber File NCV8871SEPGEVB Bill Of Materials |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 12V |
| 电流 - 输出： | 2A |
| 输入电压： | 6 V ~ 40 V |
| 稳压器拓扑结构： | 升压 |
| 频率 - 开关： | 170kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCV8871 |
| 其它名称： | NCV8871SEPGEVBOS |
NCV8871
ELECTRICAL CHARACTERISTICS ( ? 40 ° C < T J < 150 ° C, 3.2 V < V IN < 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol
Conditions
Min
Typ
Max
Unit
CURRENT SENSE AMPLIFIER
Current limit threshold voltage
Current limit,
Response time
Overcurrent protection,
Threshold voltage
Overcurrent protection,
Response Time
V cl
t cl
%V ocp
t ocp
Voltage on ISNS pin
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
CL tripped until GDRV falling edge,
V ISNS = V cl (typ) + 60 mV
Percent of V cl
From overcurrent event, Until switching
stops, V ISNS = V OCP + 40 mV
360
360
360
180
180
?
125
?
400
400
400
200
200
80
150
?
440
440
440
220
220
125
175
125
mV
ns
%
ns
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
VEA output resistance
VFB input bias current
Reference voltage
VEA maximum output voltage
VEA minimum output voltage
VEA sourcing current
VEA sinking current
g m,vea
R o,vea
I vfb,bias
V ref
V c,max
V c,min
I src,vea
I snk,vea
V FB – V ref = ± 20 mV
Current out of VFB pin
VEA output current, Vc = 2.0 V
VEA output current, Vc = 0.7 V
0.8
2.0
?
1.176
2.5
?
80
80
1.2
?
0.5
1.200
?
?
100
100
1.5
?
2.0
1.224
?
0.3
?
?
mS
M W
m A
V
V
V
m A
m A
GATE DRIVER
Sourcing current
Sinking current
Driving voltage dropout
Driving voltage source current
Backdrive diode voltage drop
Driving voltage
I src
I sink
V drv,do
I drv
V d,bd
V DRV
V DRV ≥ 6 V, V DRV ? V GDRV = 2 V
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
V GDRV ≥ 2 V
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
V IN ? V DRV , Iv DRV = 25 mA
V IN ? V DRV = 1 V
V DRV ? V IN , I d,bd = 5 mA
I VDRV = 0.1 ? 25 mA
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
600
400
600
400
600
500
250
500
250
500
?
35
?
10
6.0
6.0
8.0
8.0
800
575
800
575
800
600
350
600
350
600
0.3
45
?
10.5
6.3
6.3
8.4
8.4
?
?
?
?
?
?
?
?
?
?
0.6
?
0.7
11
6.6
6.6
8.8
8.8
mA
mA
V
mA
V
V
UVLO
Undervoltage lock ? out,
Threshold voltage
Undervoltage lock ? out,
Hysteresis
V uvlo
V uvlo,hys
V IN falling
V IN rising
3.0
50
3.1
125
3.2
200
V
mV
http://onsemi.com
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相关代理商/技术参数 |
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|---|---|
| NCV887200D1R2G | 制造商:ON Semiconductor 功能描述:IC REG CTRLR BST PWM CM |
| NCV8873 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Automotive Grade Non-Synchronous Boost Controller |
| NCV887300D1R2G | 功能描述:低压差稳压器 - LDO Auto Grade Non-Sync Boost Controller RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV8873LEDBSTGEVB | 制造商:ON Semiconductor 功能描述:NCV8873 EVAL BD - Bulk 制造商:ON Semiconductor 功能描述:BOARD EVAL FOR NCV8873LEDBST |
| NCV8876 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Automotive Grade Start-Stop Non-Synchronous Boost Controller |
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