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参数资料
| 型号： | NCV8871SEPGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCV8871SEP BOOST CTLR |
| 设计资源： | NCV8871SEPGEVB Schematic NCV8871SEPGEVB Gerber File NCV8871SEPGEVB Bill Of Materials |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 12V |
| 电流 - 输出： | 2A |
| 输入电压： | 6 V ~ 40 V |
| 稳压器拓扑结构： | 升压 |
| 频率 - 开关： | 170kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCV8871 |
| 其它名称： | NCV8871SEPGEVBOS |
NCV8871
ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND, unless otherwise indicated)
Rating
Dc Supply Voltage (VIN)
Peak Transient Voltage (Load Dump on VIN)
Dc Supply Voltage (VDRV, GDRV)
Peak Transient Voltage (VFB)
Dc Voltage (VC, VFB, ISNS)
Dc Voltage (EN/SYNC)
Dc Voltage Stress (VIN ? VDRV)*
Operating Junction Temperature
Storage Temperature Range
Peak Reflow Soldering Temperature: Pb ? Free, 60 to 150 seconds at 217 ° C
Value
? 0.3 to 40
45
12
? 0.3 to 6
? 0.3 to 3.6
? 0.3 to 6
? 0.7 to 45
? 40 to 150
? 65 to 150
265 peak
Unit
V
V
V
V
V
V
V
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*An external diode from the input to the VIN pin is required if bootstrapping VDRV and VIN off of the output voltage.
PACKAGE CAPABILITIES
Characteristic
Value
Unit
ESD Capability (All Pins)
Moisture Sensitivity Level
Package Thermal Resistance
Human Body Model
Machine Model
Junction ? to ? Ambient, R q JA (Note 1)
w 2.0
w 200
1
100
kV
V
?
° C/W
1. 1 in 2 , 1 oz copper area used for heatsinking.
Device Variations
The NCV8871 features several variants to better fit a
multitude of applications. The table below shows the typical
TYPICAL VALUES
values of parameters for the parts that are currently
available.
Part No.
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
D max
88%
86%
91%
93%
93%
f s
170 kHz
1000 kHz
1000 kHz
340 kHz
340 kHz
t ss
7.4 ms
1.25 ms
1.25 ms
3.7 ms
3.7 ms
S a
53 mV/ m s
16 mV/ m s
53 mV/ m s
53 mV/ m s
53 mV/ m s
V cl
400 mV
400 mV
400 mV
200 mV
200 mV
I src
800 mA
575 mA
800 mA
575 mA
800 mA
I sink
600 mA
350 mA
600 mA
350 mA
600 mA
V DRV
10.5 V
6.3 V
6.3 V
8.4 V
8.4 V
SCE
Y
Y
N
Y
N
DEFINITIONS
Symbol
D max
S a
I sink
Characteristic
Maximum Duty Cycle
Slope Compensating Ramp
Gate Drive Sinking Current
Symbol
f s
V cl
V DRV
Characteristic
Switching Frequency
Current Limit Trip Voltage
Drive Voltage
Symbol
t ss
I src
SCE
Characteristic
Soft ? Start Time
Gate Drive Sourcing Current
Short Circuit Enable
http://onsemi.com
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| NCV887200D1R2G | 制造商:ON Semiconductor 功能描述:IC REG CTRLR BST PWM CM |
| NCV8873 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Automotive Grade Non-Synchronous Boost Controller |
| NCV887300D1R2G | 功能描述:低压差稳压器 - LDO Auto Grade Non-Sync Boost Controller RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV8873LEDBSTGEVB | 制造商:ON Semiconductor 功能描述:NCV8873 EVAL BD - Bulk 制造商:ON Semiconductor 功能描述:BOARD EVAL FOR NCV8873LEDBST |
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