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参数资料
| 型号： | NCV8871SEPGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCV8871SEP BOOST CTLR |
| 设计资源： | NCV8871SEPGEVB Schematic NCV8871SEPGEVB Gerber File NCV8871SEPGEVB Bill Of Materials |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 12V |
| 电流 - 输出： | 2A |
| 输入电压： | 6 V ~ 40 V |
| 稳压器拓扑结构： | 升压 |
| 频率 - 开关： | 170kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCV8871 |
| 其它名称： | NCV8871SEPGEVBOS |
NCV8871
R SNS
EN/
SYNC
EN/SYNC
VC
R C
1
7
OSC
SC
TEMP
FAULT
LOGIC
+
CLK
CL
SCP
DRIVE
LOGIC
CSA
VDRV
6
5
4
2
3
VIN
C DRV
VDRV
GDRV
ISNS
GND
L
Q
D
R F1
C g
C o
V g
V o
C C
SS
Gm
V ref
8
VFB
R F2
Figure 1. Simplified Block Diagram and Application Schematic
PACKAGE PIN DESCRIPTIONS
Pin
Pin No.
1
2
3
4
5
6
7
8
Symbol
EN/SYNC
ISNS
GND
GDRV
VDRV
VIN
VC
VFB
Function
Enable and synchronization input. The falling edge synchronizes the internal oscillator. The part is disabled
into sleep mode when this pin is brought low for longer than the enable time ? out period.
Current sense input. Connect this pin to the source of the external N ? MOSFET, through a current ? sense
resistor to ground to sense the switching current for regulation and current limiting.
Ground reference.
Gate driver output. Connect to gate of the external N ? MOSFET. A series resistance can be added from
GDRV to the gate to tailor EMC performance.
Driving voltage. Internally ? regulated supply for driving the external N ? MOSFET, sourced from VIN. Bypass
with a 1.0 m F ceramic capacitor to ground.
Input voltage. If bootstrapping operation is desired, connect a diode from the input supply to VIN, in addi-
tion to a diode from the output voltage to VDRV and/or VIN.
Output of the voltage error amplifier. An external compensator network from VC to GND is used to stabilize
the converter.
Output voltage feedback. A resistor from the output voltage to VFB with another resistor from VFB to GND
creates a voltage divider for regulation and programming of the output voltage.
http://onsemi.com
2
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