- 您现在的位置：买卖IC网 > Datasheet目录483 > NDC7001C (Fairchild Semiconductor)MOSFET N+P 60V 340MA SSOT6 Datasheet资料下载
参数资料
| 型号： | NDC7001C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N+P 60V 340MA SSOT6 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 510mA，340mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 510mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 20pF @ 25V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | NDC7001CDKR |
May 2002
NDC7001C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N & P-Channel Enhancement Mode Field
Effect Transistors are produced using Fairchild’s
proprietary, high cell density, DMOS technology. This
? Q1
0.51 A, 60V.
R DS(ON) = 2 ? @ V GS = 10 V
R DS(ON) = 4 ? @ V GS = 4.5 V
very high density process has been designed to
minimize on-state resistance, provide rugged and
reliable performance and fast switching. These
device is particularly suited for low voltage, low
current, switching, and power supply applications.
? Q2 –0.34 A, 60V.
? High saturation current
R DS(ON) = 5 ? @ V GS = –10 V
R DS(ON) = 7.5 ? @ V GS = –4.5 V
? High density cell design for low R DS(ON)
? Proprietary SuperSOT TM –6 package: design using copper
lead frame for superior thermal and electrical capabilities
D1
S1
D2
4
Q2(P)
3
G2
5
2
SuperSOT
TM
-6
G1
S2
6
Q1(N)
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Q1
60
± 20
Q2
–60
± 20
Units
V
I D
Drain Current
– Continuous
(Note 1a)
0.51
–0.34
A
– Pulsed
1.5
–1
P D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
0.96
0.9
0.7
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
Package Marking and Ordering Information
Device Marking
.01C
Device
NDC7001C
Reel Size
7’’
Tape width
8mm
Quantity
3000
? 2002 Fairchild Semiconductor Corporation
NDC7001C Rev B (W)
相关PDF资料 |
PDF描述 |
|---|---|
| NDC7002N_SB9G007 | MOSFET N-CH DUAL 50V 6-SSOT |
| NDC7003P | MOSFET 2P-CH 60V 340MA SSOT6 |
| NDD03N50ZT4G | MOSFET N-CH 500V 2.6A DPAK |
| NDD04N50Z-1G | MOSFET N-CH 500V 3A IPAK |
| NDD05N50ZT4G | MOSFET N-CH 500V 5A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDC7001C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6 |
| NDC7001C | 制造商:Fairchild Semiconductor Corporation 功能描述:50V COMP N/P 2/5 O SSOT6 |
| NDC7001C_Q | 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDC7002 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDC7002N | 功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。