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参数资料
| 型号： | NDD02N60ZT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.8 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 325pF @ 25V |
| 功率 - 最大： | 57W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NDD02N60ZT4GOSDKR |
NDF02N60Z, NDD02N60Z
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction ? to ? Case (Drain)
Junction ? to ? Ambient Steady State
NDF02N60Z
NDD02N60Z
(Note 3) NDF02N60Z
(Note 4) NDD02N60Z
R q JC
R q JA
4.9
2.2
51
41
° C/W
(Note 3) NDD02N60Z ? 1
3. Insertion mounted
4. Surface mounted on FR4 board using 1 ″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
80
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
V GS = 0 V, I D = 1 mA
Reference to 25 ° C,
I D = 1 mA
BV DSS
D BV DSS /
D T J
600
0.6
V
V/ ° C
Drain ? to ? Source Leakage Current
Gate ? to ? Source Forward Leakage
V DS = 600 V, V GS = 0 V
V GS = ± 20 V
25 ° C
150 ° C
I DSS
I GSS
1
50
± 10
m A
m A
ON CHARACTERISTICS (Note 5)
Static Drain ? to ? Source On ? Resistance
V GS = 10 V, I D = 1.0 A
R DS(on)
4.0
4.8
W
Gate Threshold Voltage
Forward Transconductance
V DS = V GS , I D = 50 m A
V DS = 15 V, I D = 1.2 A
V GS(th)
g FS
3.0
4.0
1.7
4.5
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Output Capacitance (Note 6)
Reverse Transfer Capacitance (Note 6)
Total Gate Charge (Note 6)
Gate ? to ? Source Charge (Note 6)
Gate ? to ? Drain (“Miller”) Charge (Note 6)
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DD = 300 V, I D = 2.4 A,
V GS = 10 V
C iss
C oss
C rss
Q g
Q gs
Q gd
215
25
4.0
5.0
1.5
3.5
274
34
7.0
10
2.4
5.3
325
45
10
16
4.0
8.0
pF
nC
Plateau Voltage
Gate Resistance
V GP
R g
6.4
4.9
V
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn ? On Delay Time
t d(on)
9.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
V DD = 300 V, I D = 2.4 A,
V GS = 10 V, R G = 5 W
t r
t d(off)
t f
7.0
15
7.0
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I S = 2.4 A, V GS = 0 V
V GS = 0 V, V DD = 30 V
I S = 2.4 A, di/dt = 100 A/ m s
V SD
t rr
Q rr
240
0.7
1.6
V
ns
m C
5. Pulse Width ≤ 380 m s, Duty Cycle ≤ 2%.
6. Guaranteed by design.
http://onsemi.com
2
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相关代理商/技术参数 |
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|---|---|
| NDD03N50Z | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 500 V, 3.3 |
| NDD03N50Z-1G | 功能描述:MOSFET 500V 2.6A HVFET IPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDD03N50ZT4G | 功能描述:MOSFET 500V 2.6A HVFET DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDD03N60Z | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 600 V, 3.3 |
| NDD03N60Z-1G | 功能描述:MOSFET NFET IPAK 600V 2.6A 3.6R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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