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| 型号： | NDF05N50ZG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V TO-220FP |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 2.2A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 632pF @ 25V |
| 功率 - 最大： | 30W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
| 其它名称： | NDF05N50ZG-ND NDF05N50ZGOS |
NDF05N50Z, NDD05N50Z
N-Channel Power MOSFET
500 V, 1.5 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? 100% Rg Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS ( T C = 25 ° C unless otherwise noted)
Rating Symbol NDF NDD Unit
V DSS
500 V
http://onsemi.com
R DS(on) (MAX) @ 2.2 A
1.5 W
N ? Channel
D (2)
Drain ? to ? Source Voltage
V DSS
500
V
Continuous Drain Current R q JC
I D
5.5
(Note 1)
4.7
A
Continuous Drain Current
R q JC , T A = 100 ° C
Pulsed Drain Current, V GS @ 10 V
Power Dissipation R q JC
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy, I D =
5.0 A
ESD (HBM) (JESD22 ? A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T A = 25 ° C) (Figure 17)
Peak Diode Recovery (Note 2)
I D
I DM
P D
V GS
E AS
V esd
V ISO
dV/dt
3.5
(Note 1)
20
30
± 30
130
3000
4500
4.5
3
19
83
A
A
W
V
mJ
V
V
V/ns
G (1)
S (3)
3
3
MOSFET dV/dt
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
dV/dt
I S
T L
T J , T stg
60
5
260
? 55 to 150
V/ns
A
° C
° C
1
2
NDF05N50ZG
TO ? 220FP
CASE 221D
4
1
2
NDF05N50ZH
TO ? 220FP
CASE 221AH
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I S = 4.4 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
1
2
NDD05N50Z ? 1G
IPAK
CASE 369D
4
1 2
3
NDD05N50ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
June, 2013 ? Rev. 7
1
Publication Order Number:
NDF05N50Z/D
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相关代理商/技术参数 |
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| NDF05N50ZH | 功能描述:MOSFET NFET 500V 5A 1.2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| NDF06N60ZG | 功能描述:MOSFET NFET TO220FP 600V 6A .98R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDF06N60ZH | 功能描述:MOSFET NFET 600V 6A 980 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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