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参数资料
| 型号： | NDF05N50ZG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V TO-220FP |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 2.2A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 632pF @ 25V |
| 功率 - 最大： | 30W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FP |
| 包装： | 管件 |
| 其它名称： | NDF05N50ZG-ND NDF05N50ZGOS |
NDF05N50Z, NDD05N50Z
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction ? to ? Case (Drain)
Junction ? to ? Ambient Steady State
NDF05N50Z
NDD05N50Z
(Note 3) NDF05N50Z
(Note 4) NDD05N50Z
R q JC
R q JA
4.2
1.5
50
38
° C/W
(Note 3) NDD05N50Z ? 1
3. Insertion mounted
4. Surface mounted on FR4 board using 1 ″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
80
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BV DSS
D BV DSS /
D T J
V GS = 0 V, I D = 1 mA
Reference to 25 ° C,
I D = 1 mA
500
0.6
V
V/ ° C
Drain ? to ? Source Leakage Current
Gate ? to ? Source Forward Leakage
I DSS
I GSS
V DS = 500 V, V GS = 0 V
V GS = ± 20 V
25 ° C
150 ° C
1
50
± 10
m A
m A
ON CHARACTERISTICS (Note 5)
Static Drain ? to ? Source
On ? Resistance
R DS(on)
V GS = 10 V, I D = 2.2 A
1.25
1.5
W
Gate Threshold Voltage
Forward Transconductance
V GS(th)
g FS
V DS = V GS , I D = 50 m A
V DS = 15 V, I D = 2.5 A
3.0
3.9
3.5
4.5
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
C iss
421
530
632
pF
Output Capacitance (Note 6)
Reverse Transfer Capacitance
(Note 6)
C oss
C rss
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
50
8
68
15
80
25
Total Gate Charge (Note 6)
Q g
9
18.5
28
nC
Gate ? to ? Source Charge (Note 6)
Gate ? to ? Drain (“Miller”) Charge
(Note 6)
Plateau Voltage
Q gs
Q gd
V GP
V DD = 250 V, I D = 5 A,
V GS = 10 V
2
5
4
10
6.5
6
15
V
Gate Resistance
R g
1.5
4.5
8
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn ? On Delay Time
t d(on)
11
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 250 V, I D = 5 A,
V GS = 10 V, R G = 5 W
15
24
14
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V SD
t rr
Q rr
I S = 5 A, V GS = 0 V
V GS = 0 V, V DD = 30 V
I S = 5 A, di/dt = 100 A/ m s
255
1.25
1.6
V
ns
m C
5. Pulse Width ≤ 380 m s, Duty Cycle ≤ 2%.
6. Guaranteed by design.
http://onsemi.com
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