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| 型号： | NDS9948 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2P-CH 60V 2.3A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 250 毫欧 @ 2.3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 394pF @ 30V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | NDS9948DKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
I AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V DD =– 54 V
1 5
–10
mJ
A
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V, I D = –250 μ A
–60
V
? BV DSS
? T J
I DSS
I GSSF
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
I D = –250 μ A, Referenced to25 ° C
V DS = –40 V, V GS = 0 V
V DS = –40 V,V GS = 0 V T J =–55 ° C
V GS = 20 V, V DS = 0 V
–52
–2
–25
100
mV/ ° C
μ A
nA
I GSSR
Gate–Body Leakage, Reverse
V GS = –20 V
V DS = 0 V
–100
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to25 ° C
V GS = –10 V, I D = –2.3 A
–1
–1.5
4
138
–3
250
V
mV/ ° C
m ?
On–Resistance
V GS = –4.5 V, I D = –1.6 A
V GS = –10 V,I D = –2.3A, T J =125 ° C
175
225
500
433
I D(on)
On–State Drain Current
V GS = –10 V, V DS = –5 V
–10
A
g FS
Forward Transconductance
V DS = –10 V,
I D = –2.3 A
5
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –30 V,
f = 1.0 MHz
V GS = 0 V,
394
53
23
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –30 V,
V GS = –10 V,
V DS = –30 V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –2.3 A,
6
9
16
3
9
1.4
12
18
29
6
13
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
1.7
nC
NDS9948 Rev B 1 (W)
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PDF描述 |
|---|---|
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| NDT014L | MOSFET N-CH 60V 2.8A SOT-223 |
| NDT014 | MOSFET N-CH 60V 2.7A SOT-223-4 |
| NDT2955 | MOSFET P-CH 60V 2.5A SOT-223-4 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NDS9948 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS9948_02 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 60V P-Channel PowerTrench MOSFET |
| NDS9948_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 60V P-Channel PowerTrench??? MOSFET |
| NDS9948_Q | 功能描述:MOSFET Dual PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS9948-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDS Series Dual P-Channel 60 V 250 mOhm PowerTrench Mosfet - SOIC-8 |
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